HMPSA26 Hi-Sincerity Mocroelectronics, HMPSA26 Datasheet

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HMPSA26

Manufacturer Part Number
HMPSA26
Description
NPN SILICON TRANSISTOR
Manufacturer
Hi-Sincerity Mocroelectronics
Datasheet
HMPSA26
NPN SILICON TRANSISTOR
Description
The HMPSA26 is designed for using in darligton transistor.
Absolute Maximum Ratings
Characteristics
*VCE(sat)
Storage Temperature ............................................................................................ -55 ~ +150 C
Junction Temperature ................................................................................... +150 C Maximum
Total Power Dissipation (Ta=25 C) ............................................................................... 625 mW
VCBO Collector to Base Voltage ........................................................................................ 50 V
VCES Collector to Emitter Voltage...................................................................................... 50 V
VEBO Emitter to BASE Voltage .......................................................................................... 10 V
IC Collector Current ....................................................................................................... 500 mA
Maximum Temperatures
Maximum Power Dissipation
Maximum Voltages and Currents (Ta=25 C)
VBE(on)
BVCBO
BVEBO
Symbol
BVCES
*hFE1
*hFE2
ICBO
IEBO
ICES
Min.
10K
10K
50
50
10
-
-
-
-
-
HI-SINCERITY
MICROELECTRONICS CORP.
(Ta=25 C)
Typ.
0.6
-
-
-
-
-
-
-
-
-
Max.
100
500
100
1.5
2
-
-
-
-
-
Unit
nA
nA
nA
V
V
V
V
V
*Pulse Test : Pulse Width 380us, Duty Cycle 2%
IC=100uA, IE=0
IC=100uA, VBE=0
IE=10uA, IC=0
VCB=40V, IE=0
VCE=40V, VBE=0
VEB=10V, IC=0
IC=100mA, IB=100uA
VCE=5V, IC=100mA
VCE=5V, IC=10mA
VCE=5V, IC=100mA
Test Conditions
Spec. No. : HE6308-B
Issued Date : 1992.09.09
Revised Date : 2000.10.01
Page No. : 1/3
HSMC Product Specification

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HMPSA26 Summary of contents

Page 1

... HI-SINCERITY MICROELECTRONICS CORP. HMPSA26 NPN SILICON TRANSISTOR Description The HMPSA26 is designed for using in darligton transistor. Absolute Maximum Ratings Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 C Junction Temperature ................................................................................... +150 C Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25 C) ............................................................................... 625 mW Maximum Voltages and Currents (Ta=25 C) VCBO Collector to Base Voltage ........................................................................................ 50 V VCES Collector to Emitter Voltage ...

Page 2

HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 100000 V =5V 10000 CE 1000 100 Collector Current (mA) On Voltage & Collector Current BE(ON) 0.1 0.01 0.1 1 Collector Current (mA) ...

Page 3

HI-SINCERITY MICROELECTRONICS CORP. TO-92 Dimension Inches DIM Min. Max. A 0.1704 0.1902 B 0.1704 0.1902 C 0.5000 - D 0.0142 0.0220 E - *0.0500 F 0.1323 0.1480 Notes : ...

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