HMPSA42 Hi-Sincerity Mocroelectronics, HMPSA42 Datasheet

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HMPSA42

Manufacturer Part Number
HMPSA42
Description
NPN EPITAXIAL PLANAR TRANSISTOR
Manufacturer
Hi-Sincerity Mocroelectronics
Datasheet

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HMPSA42
NPN EPITACIAL PLANAR TRANSISTOR
Description
The HMPSA42 is high voltage transistor.
Features
Absolute Maximum Ratings
Characteristics
Classification Of Rank
*VCE(sat)
Storage Temperature ............................................................................................ -55 ~ +150 C
Junction Temperature ................................................................................... +150 C Maximum
Total Power Dissipation (Ta=25 C) ............................................................................... 625 mW
VCBO Collector to Base Voltage ...................................................................................... 300 V
VCEO Collector to Emitter Voltage ................................................................................... 300 V
VEBO Emitter to Base Voltage ............................................................................................. 6 V
IC Collector Current ....................................................................................................... 500 mA
*VBE(sat)
HMPSA42
High Collector-Emitter Breakdown Voltage
Low Collector-Emitter Saturation Voltage
For Complementary Use with PNP Type HMPSA92
Maximum Temperatures
Maximum Power Dissipation
Maximum Voltages and Currents (Ta=25 C)
BVCBO
BVCEO
BVEBO
Symbol
*hFE1
*hFE2
*hFE3
ICBO
IEBO
Cob
fT
Rank
NS
N
Min.
300
300
25
40
40
50
6
-
-
-
-
-
HI-SINCERITY
MICROELECTRONICS CORP.
(Ta=25 C)
hFE1
Typ.
80
25
-
-
-
-
-
-
-
-
-
-
-
-
Max.
100
100
350
900
3
-
-
-
-
-
-
-
hFE2
120
40
MHz
Unit
mV
mV
nA
nA
pF
V
V
V
*Pulse Test : Pulse Width 380us, Duty Cycle 2%
IC=100uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=260V, IE=0
VEB=6V, IC=0
IC=20mA, IB=2mA
IC=20mA, IB=2mA
IC=1mA, VCE=10V
IC=10mA, VCE=10V
IC=30mA, VCE=10V
IC=10mA, VCE=20V, f=100MHZ
VCB=20V, f=1MHz, IE=0
hFE3
120
40
Test Conditions
Spec. No. : HE6333
Issued Date : 1992.11.18
Revised Date : 2001.05.01
Page No. : 1/3
HSMC Product Specification
VCE(sat)
200mV
350mV

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HMPSA42 Summary of contents

Page 1

... HI-SINCERITY MICROELECTRONICS CORP. HMPSA42 NPN EPITACIAL PLANAR TRANSISTOR Description The HMPSA42 is high voltage transistor. Features High Collector-Emitter Breakdown Voltage Low Collector-Emitter Saturation Voltage For Complementary Use with PNP Type HMPSA92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 C Junction Temperature ................................................................................... +150 C Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25 C) ...

Page 2

... Collector Current (mA) Capacitance & Reverse-Biased Voltage 100 10 Cob 1 0 Reverse Biased Voltage (V) Safe Operating Area 10000 1000 100 Forward Biased Voltage-Vce (V) HMPSA42 10000 1000 100 10 100 1000 0.1 1000 100 10 100 1000 1 700 600 P = 500 P =100ms T P ...

Page 3

... Head Office And Factory : Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454 Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel : 886-3-5983621~5 Fax : 886-3-5982931 HMPSA42 ...

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