MT28F004B3VG-10 TET Micron, MT28F004B3VG-10 TET Datasheet - Page 19

• Manufacturer Part Number: MT28F004B3VG-10 TET
• Description: Flash Memory, 4Mbit, Sectored, 3.3V Supply, TSOP I, 40-Pin
• Manufacturer: Micron

CAPACITANCE
(T
READ AND STANDBY CURRENT DRAIN
Commercial Temperature (0°C
NOTE: 1. I
4Mb Smart 3 Boot Block Flash Memory
F45_1.p65 – Rev. 1/01
A
PARAMETER/CONDITION
Input Capacitance
Output Capacitance
PARAMETER/CONDITION
READ CURRENT: WORD-WIDE, CMOS INPUT LEVELS
(CE#
or • V
READ CURRENT: BYTE-WIDE, CMOS INPUT LEVELS
(CE#
or • V
STANDBY CURRENT: TTL INPUT LEVELS
V
(CE# = RP# = V
STANDBY CURRENT: CMOS INPUT LEVELS
V
(CE# = RP# = V
DEEP POWER-DOWN CURRENT: V
STANDBY OR READ CURRENT: V
DEEP POWER-DOWN CURRENT: V
= 25°C; f = 1 MHz)
CC
CC
power supply standby current
power supply standby current
2. I
CC
CC
0.2V; OE# • V
0.2V; OE# • V
CC
CC
- 0.2V; RP# • V
- 0.2V; RP# = V
is dependent on cycle rates.
is dependent on output loading. Specified values are obtained with the outputs open.
IH
CC
; Other inputs = V
- 0.2V)
CC
CC
- 0.2V; f = 5 MHz; Other inputs
- 0.2V; f = 5 MHz; Other inputs
CC
CC
- 0.2V)
- 0.2V)
T
A
PP
CC
PP
IL
SUPPLY (V
+70°C) and Extended Temperature (-40°C
or V
SUPPLY (RP# = V
SUPPLY (RP# = V
IH
)
PP
SMART 3 BOOT BLOCK FLASH MEMORY
5.5V)
SS
SS
19
±0.2V)
±0.2V)
0.2V
0.2V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SYMBOL
SYMBOL
T
C
C
A
O
I
I
I
I
I
I
I
I
CC
CC
CC
CC
CC
PP
PP
1
2
1
2
3
4
6
+85°C)
MAX
12
MAX UNITS NOTES
8
100
±15
15
15
2
8
5
UNITS NOTES
©2000, Micron Technology, Inc.
pF
pF
mA
mA
mA
µA
µA
µA
µA
4Mb
1, 2
1, 2