MT28F004B3VG-10 TET Micron, MT28F004B3VG-10 TET Datasheet - Page 20

• Manufacturer Part Number: MT28F004B3VG-10 TET
• Description: Flash Memory, 4Mbit, Sectored, 3.3V Supply, TSOP I, 40-Pin
• Manufacturer: Micron

READ TIMING PARAMETERS
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
Commercial Temperature (0°C
NOTE: 1. Measurements tested under AC Test Condition.
AC TEST CONDITIONS
4Mb Smart 3 Boot Block Flash Memory
F45_1.p65 – Rev. 1/01
Input pulse levels ..................................................... 0V to 3V
Input rise and fall times ................................................ <10ns
Input timing reference level ........................................... 1.5V
Output timing reference level ........................................ 1.5V
Output load ................................... 1 TTL gate and C
AC CHARACTERISTICS
PARAMETER
READ cycle time
Access time from CE#
Access time from OE#
Access time from address
RP# HIGH to output valid delay
OE# or CE# HIGH to output in High-Z
Output hold time from OE#, CE# or address change
RP# LOW pulse width
2. OE# may be delayed by
t
ACE minus
T
A
+70°C) and Extended Temperature (-40°C
t
AOE after CE# falls before
L
= 50pF
SMART 3 BOOT BLOCK FLASH MEMORY
20
SYMBOL
t
t
t
RWH
t
t
AOE
t
t
ACE
t
AA
OD
OH
RC
RP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
ACE is affected.
MIN
150
90
0
-9
MAX
1,000
90
45
90
25
T
A
MIN
100
150
+85°C); V
0
-10 ET
MAX
1,000
100
100
50
45
CC
= +3.3V ±0.3V
©2000, Micron Technology, Inc.
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
4Mb
NOTES
1, 2
1, 2
1
1
1
1
1
1