MT28F004B3VG-10 TET Micron, MT28F004B3VG-10 TET Datasheet - Page 25

• Manufacturer Part Number: MT28F004B3VG-10 TET
• Description: Flash Memory, 4Mbit, Sectored, 3.3V Supply, TSOP I, 40-Pin
• Manufacturer: Micron

SPEED-DEPENDENT WRITE/ERASE AC TIMING CHARACTERISTICS AND
RECOMMENDED AC OPERATING CONDITIONS: WE#-CONTROLLED WRITES
Commercial Temperature (0°C
NOTE: 1. Measured with V
4Mb Smart 3 Boot Block Flash Memory
F45_1.p65 – Rev. 1/01
AC CHARACTERISTICS
PARAMETER
Address hold time from WE# HIGH
Data hold time from WE# HIGH
CE# setup time to WE# LOW
CE# hold time from WE# HIGH
V
V
RP# HIGH to WE# LOW delay
RP# at V
WRITE duration (WORD or BYTE WRITE)
Boot BLOCK ERASE duration
Parameter BLOCK ERASE duration
Main BLOCK ERASE duration
WE# HIGH to busy status (SR7 = 0)
V
RP# at V
Boot block relock delay time
PP
PP
PP
setup time to WE# HIGH
setup time to WE# HIGH
hold time from status data valid
2. Measured with V
3. RP# should be held at V
4. WRITE/ERASE times are measured to valid status register data (SR7 = 1).
5. Polling status register before
6.
HH
HH
t
REL is required to relock boot block after WRITE or ERASE to boot block.
or WP# HIGH setup time to WE# HIGH
or WP# HIGH hold time from status data valid
PP
PP
= V
= V
PPH 1
PPH 2
HH
T
or WP# held HIGH until boot block WRITE or ERASE is complete.
= 3.3V.
= 5V.
A
t
WB is met may falsely indicate WRITE or ERASE completion.
+70°C) and Extended Temperature (-40°C
SMART 3 BOOT BLOCK FLASH MEMORY
SYMBOL
t
t
t
t
t
t
WED1
WED2
WED3
WED4
t
t
t
VPS1
VPS2
t
t
t
t
t
VPH
RHH
RHS
25
t
t
REL
WB
AH
DH
CH
CS
RS
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1,000
MIN
200
100
200
300
300
600
200
10
0
0
0
6
0
0
-9, -10 ET
MAX
200
T
A
+85°C); V
UNITS
ms
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns
ns
ns
ns
CC
= +3.3V ±0.3V
©2000, Micron Technology, Inc.
NOTES
4Mb
3, 4
1
2
3
4
4
4
5
4
3
6