MT28F004B3VG-10TET Micron, MT28F004B3VG-10TET Datasheet - Page 25

• Manufacturer Part Number: MT28F004B3VG-10TET
• Description: 4Mb SMART 3 BOOT BLOCK FLASH MEMORY
• Manufacturer: Micron

TIMING PARAMETERS
Commercial Temperature (0ºC
Extended Temperature (-40ºC
NOTE: 1. Address inputs are “Don’t Care” but must be held stable.
4Mb Smart 3 Boot Block Flash Memory
F45_2.p65 – Rev. 2, Pub. 3/01
A0–A17/(A18)
SYMBOL
t
t
t
t
t
t
t
t
t
t
WC
WPH
WP
AS
AH
DS
DH
CS
CH
VPS1
DQ0–DQ15
DQ0–DQ7/
WP#
RP#
WE#
OE#
2. If BYTE# is LOW, data and command are 8-bit. If BYTE# is HIGH, data is 16-bit and command is 8-bit (MT28F400B3
3. Either RP# at V
CE#
V
PP
2
3
3
only).
V
V
V
PPH2
PPH1
V
PPLK
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
HH
IH
IH
IH
IH
IH
IH
IH
IL
IL
IL
IL
IL
IL
IL
IL
ERASE SETUP input
t CS
t RS
WRITE SETUP or
t WP
HH
t DS
t AS
or WP# HIGH unlocks the boot block.
Note 1
CMD
in
T
T
A
A
t AH
t CH
+85ºC)
t WC
t WPH
MIN
WE#-CONTROLLED WRITE/ERASE
+70ºC)
200
80
20
50
50
50
t DH
0
0
0
0
-8/-8 ET
t DS
WRITE or ERASE (block)
WRITE data or ERASE
address asserted, and
CONFIRM issued
t VPS1
t AS
t VPS2
t RHS
MAX
WRITE/ERASE CYCLE
Data-in
CMD/
A
IN
UNITS
[Unlock boot block]
[Unlock boot block]
SMART 3 BOOT BLOCK FLASH MEMORY
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t AH
[3.3V V
[3.3V V
[5V V
t DH
t WED1/2/3/4
25
PP
t WB
PP
PP
]
]
]
SYMBOL
t
t
t
t
t
t
t
t
t
t
VPS2
RS
RHS
WED1
WED2
WED3
WED4
WB
VPH
RHH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
(SR7=0)
Status
executed, status register
checked for completion
WRITE or ERASE
(SR7=1)
Status
t VPH
t RHH
1,000
Command for next
MIN
100
100
100
100
500
200
operation issued
©2001, Micron Technology, Inc.
2
0
0
-8/-8 ET
DON’T CARE
CMD
MAX
in
4Mb
UNITS
ms
ms
ms
ns
ns
ns
µs
ns
ns
ns