MT28F004B3VG-10TET Micron, MT28F004B3VG-10TET Datasheet - Page 6

• Manufacturer Part Number: MT28F004B3VG-10TET
• Description: 4Mb SMART 3 BOOT BLOCK FLASH MEMORY
• Manufacturer: Micron

TRUTH TABLE (MT28F004B3)
NOTE: 1. L = V
4Mb Smart 3 Boot Block Flash Memory
F45_2.p65 – Rev. 2, Pub. 3/01
Standby
RESET
READ
Output Disable
ERASE SETUP
ERASE CONFIRM
WRITE SETUP
WRITE
READ ARRAY
ERASE SETUP
ERASE CONFIRM
ERASE CONFIRM
WRITE SETUP
WRITE
WRITE
READ ARRAY
Manufacturer Compatibility
Device (top boot)
Device (bottom boot)
FUNCTION
READ
WRITE/ERASE (EXCEPT BOOT BLOCK)
WRITE/ERASE (BOOT BLOCK)
DEVICE IDENTIFICATION
2. V
3. Operation must be preceded by ERASE SETUP command.
4. Operation must be preceded by WRITE SETUP command.
5. The READ ARRAY command must be issued before reading the array after writing or erasing.
6. When WP# = V
7. V
8. V
9. A1–A8, A10–A18 = V
4, 6
4
4
PPH
HH
ID
= 12V; may also be read by issuing the IDENTIFY DEVICE command.
= 12V.
= V
IL
5
5
, H = V
PPH 1
3
3
3, 6
= 3.3V or V
IH
, X = V
IH
, RP# may be at V
IL
IL
.
or V
PPH 2
8, 9
IH
= 5V.
.
2, 7
1
IH
RP#
V
V
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
or V
L
HH
HH
2
HH
.
CE#
H
SMART 3 BOOT BLOCK FLASH MEMORY
X
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
OE#
6
H
H
H
H
H
H
H
H
X
X
H
H
H
H
H
L
L
L
L
WE#
H
X
X
H
H
H
H
L
L
L
L
L
L
L
L
L
L
L
L
Micron Technology, Inc., reserves the right to change products or specifications without notice.
WP#
X
X
X
X
X
X
X
X
X
X
X
H
X
X
H
X
X
X
X
A0
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
H
H
L
A9
V
V
V
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
ID
ID
ID
V
V
V
V
V
V
V
X
X
X
X
X
X
X
X
X
X
X
PPH
PPH
X
PPH
PPH
PPH
PPH
X
PP
©2001, Micron Technology, Inc.
DQ0–DQ7
Data-Out
10h/40h
10h/40h
Data-In
Data-In
Data-In
High-Z
High-Z
High-Z
4Mb
D0h
D0h
D0h
20h
20h
89h
78h
79h
FFh
FFh