MT28F004B3VG-8BET

Manufacturer Part NumberMT28F004B3VG-8BET
Description512K x 8 3V only, dula supply, smart 3 boot block flash memory
ManufacturerMicron
MT28F004B3VG-8BET datasheet
 


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FLASH MEMORY
FEATURES
• Seven erase blocks:
16KB/8K-word boot block (protected)
Two 8KB/4K-word parameter blocks
Four main memory blocks
• Smart 3 technology (B3):
3.3V ±0.3V V
CC
3.3V ±0.3V V
application programming
PP
5V ±10% V
application/production programming
PP
• Compatible with 0.3µm Smart 3 device
• Advanced 0.18µm CMOS floating-gate process
• Address access time: 80ns
• 100,000 ERASE cycles
• Industry-standard pinouts
• Inputs and outputs are fully TTL-compatible
• Automated write and erase algorithm
• Two-cycle WRITE/ERASE sequence
• Byte- or word-wide READ and WRITE
(MT28F400B3, 256K x 16/512K x 8)
• Byte-wide READ and WRITE only
(MT28F004B3, 512K x 8)
• TSOP and SOP packaging options
OPTIONS
• Timing
80ns access
• Configurations
512K x 8
256K x 16/512K x 8
• Boot Block Starting Word Address
Top (3FFFFh)
Bottom (00000h)
• Operating Temperature Range
Commercial (0ºC to +70ºC)
Extended (-40ºC to +85ºC)
• Packages
44-pin SOP (MT28F400B3)
48-pin TSOP Type I (MT28F400B3)
40-pin TSOP Type I (MT28F004B3)
NOTE:
1. This generation of devices does not support 12V V
compatibility production programming; however, 5V V
application production programming can be used with no
loss of performance.
Part Number Example:
MT28F400B3SG-8 T
4Mb Smart 3 Boot Block Flash Memory
F45_3.p65 – Rev. 3, Pub. 12/01
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.
SMART 3 BOOT BLOCK FLASH MEMORY
MT28F004B3
MT28F400B3
3V Only, Dual Supply (Smart 3)
40-Pin TSOP Type I 48-Pin TSOP Type I
1
GENERAL DESCRIPTION
MARKING
The MT28F004B3 (x8) and MT28F400B3 (x16/x8)
are nonvolatile, electrically block-erasable (flash), pro-
-8
grammable memory devices containing 4,194,304 bits
organized as 262,144 words (16 bits) or 524,288 bytes (8
MT28F004B3
bits). Writing or erasing the device is done with either a
MT28F400B3
3.3V or 5V V
PP
with a 3.3V V
T
5V V
is optimal for application and production pro-
PP
B
gramming. These devices are fabricated with Micron’s
advanced 0.18µm CMOS floating-gate process.
The MT28F004B3 and MT28F400B3 are organized
None
into seven separately erasable blocks. To ensure that
ET
critical firmware is protected from accidental erasure or
overwrite, the devices feature a hardware-protected
SG
boot block. Writing or erasing the boot block requires
WG
either applying a super-voltage to the RP# pin or driv-
VG
ing WP# HIGH in addition to executing the normal write
or erase sequences. This block may be used to store
PP
code implemented in low-level system recovery. The
PP
remaining blocks vary in density and are written and
erased with no additional security measures.
Refer to Micron’s Web site (www.micron.com/flash)
for the latest data sheet.
1
4Mb
44-Pin SOP
voltage, while all operations are performed
. Due to process technology advances,
CC
©2001, Micron Technology, Inc.

MT28F004B3VG-8BET Summary of contents

  • Page 1

    ... Part Number Example: MT28F400B3SG-8 T 4Mb Smart 3 Boot Block Flash Memory F45_3.p65 – Rev. 3, Pub. 12/01 PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE. SMART 3 BOOT BLOCK FLASH MEMORY MT28F004B3 MT28F400B3 3V Only, Dual Supply (Smart 3) 40-Pin TSOP Type I 48-Pin TSOP Type I ...

  • Page 2

    ... A8 8 WE WP# 12 A18 ORDER NUMBER AND PART MARKING MT28F004B3VG-8 B MT28F004B3VG-8 T MT28F004B3VG-8 BET MT28F004B3VG-8 TET 2 44-PIN SOP RP WE# A17 A10 A11 A12 ...

  • Page 3

    ... Register Register 3 Input 8 Buffer Input 7 Buffer Input Buffer A-1 Input Data Latch/Mux Output Buffer DQ15 Output 7 Buffer 8 Output Buffer 8 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 4Mb 1 DQ15/( DQ8–DQ14 DQ0–DQ7 ...

  • Page 4

    ... V Supply Power Supply: +3.3V ±0.3V Supply Ground – No Connect: These pins may be driven or left unconnected. Micron Technology, Inc., reserves the right to change products or specifications without notice. 4 DESCRIPTION (5V) and RP during a 2 PPH IH during all other modes IH (3.3V (5V “ ...

  • Page 5

    ... High 70h 70h High 71h 71h High-Z ID Micron Technology, Inc., reserves the right to change products or specifications without notice. 4Mb High-Z High-Z A-1 High Data- Data-In Data-In X ...

  • Page 6

    ... Micron Technology, Inc., reserves the right to change products or specifications without notice. 4Mb DQ0–DQ7 PP High-Z High-Z Data-Out High-Z 20h D0h 10h/40h Data-In FFh 20h D0h D0h 10h/40h Data-In Data-In FFh 89h ...

  • Page 7

    ... PP ISM and the read path (i.e., memory array, ID register or status register). Commands may be issued to the CEL while the ISM is active. However, there are restrictions on Micron Technology, Inc., reserves the right to change products or specifications without notice. 7 4Mb or when the HH status, write status and PP © ...

  • Page 8

    ... Main Block 20000h 40000h 1FFFFh 3FFFFh 128KB Main Block 10000h 20000h 0FFFFh 1FFFFh 128KB Main Block 00000h 00000h Top Boot MT28F004B3/400B3xx-xxT Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 4Mb ) HH HH ...

  • Page 9

    ... CE# and WE# must be LOW. Addresses are “Don’t Care” but must be held stable, except during an ERASE CONFIRM (described in a later section). The 8-bit com- Micron Technology, Inc., reserves the right to change products or specifications without notice the device returns to the previous ...

  • Page 10

    ... Requests a halt of the ERASE and puts the device into the erase suspend mode. When the device is in this mode, only READ STATUS REGISTER, READ ARRAY and ERASE RESUME commands may be executed. 10 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 4Mb ...

  • Page 11

    ... S must be cleared by CLEAR STATUS REGISTER RESET. PP Reserved for future use. 11 status bit (SR3 2–0 voltage. It does not monitor V PP voltage. The V PP Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 4Mb PP pin is PP ...

  • Page 12

    ... IA ID 70h READ X SRD 50h 20h WRITE BA D0h B0h WRITE X D0h 40h WRITE WA WD 10h WRITE WA WD Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 4Mb . PPH until PPH NOTES ...

  • Page 13

    ... WRITE PP voltage not valid at time of ERASE CONFIRM PP voltage error, with WRITE and ERASE errors PP 13 status bit (SR3) is set Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 4Mb PP ...

  • Page 14

    ... CC . When (3.3V) Address Data NOTE Power-Up/Reset Timing Diagram Micron Technology, Inc., reserves the right to change products or specifications without notice valid CC -GND-V CC Note VALID VALID t RWH UNDEFINED must be within the valid operating range before RP# CC goes HIGH ...

  • Page 15

    ... SMART 3 BOOT BLOCK FLASH MEMORY COMPLETE WRITE STATUS-CHECK 1 Start (WRITE completed SEQUENCE SR3 = 0? V Error PP YES NO SR4 = 0? BYTE/WORD WRITE Error YES WRITE Successful Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 4Mb 5 ...

  • Page 16

    ... ERASE Resumed 16 COMPLETE BLOCK ERASE STATUS-CHECK SEQUENCE SR3 = 0? V Error PP YES YES SR4 Command Sequence Error NO NO SR5 = 0? BLOCK ERASE Error YES ERASE Successful Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 4Mb 6 6 ...

  • Page 17

    ... SUSPEND 3. STATUS REGISTER READ NO SR7 = 1? YES NO SR6 = 1? YES WRITE FFh (READ ARRAY) Done NO Reading? YES WRITE D0h (ERASE RESUME) Resume ERASE 17 ERASE Completed Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 4Mb ...

  • Page 18

    ... CC V – 0. – 500 ID I – 500 Micron Technology, Inc., reserves the right to change products or specifications without notice. 4Mb NOTES UNITS NOTES µA µA µA µA ©2001, Micron Technology, Inc. ...

  • Page 19

    ... SYMBOL MAX UNITS NOTES 100 µ µ ±15 µ µ Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 4Mb ...

  • Page 20

    ... MAX ACE 80 t AOE RWH 1,000 150 t ACE is affected. Micron Technology, Inc., reserves the right to change products or specifications without notice. 4Mb 1 = +3.3V ±0.3V UNITS NOTES ©2001, Micron Technology, Inc. ...

  • Page 21

    ... MIN MAX UNITS RWH VALID DATA -8/-8 ET MIN 0 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 4Mb DON’T CARE UNDEFINED MAX UNITS 1,000 ...

  • Page 22

    ... MAX UNITS SYMBOL RWH VALID DATA -8/-8 ET MIN 0 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 4Mb DON’T CARE UNDEFINED MAX UNITS 1,000 ...

  • Page 23

    ... 200 200 µ plus read current if a READ Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 4Mb ...

  • Page 24

    ... TYP MAX TYP MAX UNITS NOTES 0.4 7 0.4 7 2.8 14 1.5 14 1.5 – 1 – 1.5 – 1 – Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 4Mb NOTES ...

  • Page 25

    ... Command for next executed, status register operation issued checked for completion MIN 100 1,000 100 2 100 100 500 200 0 0 Micron Technology, Inc., reserves the right to change products or specifications without notice. 4Mb CMD in DON’T CARE -8/-8 ET MAX UNITS µ ...

  • Page 26

    ... Command for next executed, status register operation issued checked for completion MIN 100 1,000 100 2 100 100 500 200 0 0 Micron Technology, Inc., reserves the right to change products or specifications without notice. 4Mb CMD in DON’T CARE -8/-8 ET MAX UNITS µ ...

  • Page 27

    ... MAX GAGE PLANE .010 (0.25) .0315 (0.80) MIN Micron Technology, Inc., reserves the right to change products or specifications without notice. 27 4Mb SEE DETAIL A .016 (0.40) .010 (0.25) DETAIL A (ROTATED 90 CW) .066 (1.72) ©2001, Micron Technology, Inc. ...

  • Page 28

    ... SEE DETAIL A .047 (1.20) MAX MIN 28 .010 (0.25) .475 (12.07) .469 (11.91) .010 (0.25) .004 (0.10) .008 (0.20) .002 (0.05) .0315 (0.80) DETAIL A Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 4Mb GAGE PLANE .024 (0.60) .016 (0.40) ...

  • Page 29

    ... SEE DETAIL A MIN 29 .010 (0.25) .397 (10.08) .391 (9.93) .004 (0.10) MAX .008 (0.20) .002 (0.05) DETAIL A .0315 (0.80) Micron Technology, Inc., reserves the right to change products or specifications without notice. 4Mb .010 (0.25) GAGE PLANE .024 (0.60) .016 (0.40) ©2001, Micron Technology, Inc. ...

  • Page 30

    ... Added 80ns access time for commercial and extended temperature ranges 4Mb Smart 3 Boot Block Flash Memory F45_3.p65 – Rev. 3, Pub. 12/01 SMART 3 BOOT BLOCK FLASH MEMORY Micron Technology, Inc., reserves the right to change products or specifications without notice. 30 4Mb ©2001, Micron Technology, Inc. ...