MT28F004B3VG-8BET Micron, MT28F004B3VG-8BET Datasheet - Page 14

• Manufacturer Part Number: MT28F004B3VG-8BET
• Description: 512K x 8 3V only, dula supply, smart 3 boot block flash memory
• Manufacturer: Micron

WRITE/ERASE CYCLE ENDURANCE
fabricated to meet advanced firmware storage require-
ments. To ensure this level of reliability, V
3.3V ±0.3V or 5V ±10% during WRITE or ERASE cycles.
Due to process technology advances, 5V V
for application and production programming.
POWER USAGE
power-saving features that may be utilized in the array
read mode to conserve power. Deep power-down mode
is enabled by bringing RP# LOW. Current draw (I
this mode is a maximum of 8µA at 3.3V V
HIGH, the device enters standby mode. In this mode,
maximum I
brought HIGH during a WRITE or ERASE, the ISM contin-
ues to operate, and the device consumes the respective
active power until the WRITE or ERASE is completed.
4Mb Smart 3 Boot Block Flash Memory
F45_3.p65 – Rev. 3, Pub. 12/01
The MT28F004B3 and MT28F400B3 are designed and
The MT28F004B3 and MT28F400B3 offer several
CC
current is 100µA at 3.3V V
CC
. When CE# is
PP
PP
CC
must be at
. If CE# is
is optimal
CC
SMART 3 BOOT BLOCK FLASH MEMORY
) in
14
POWER-UP
tions is minimized because two consecutive cycles are
required to execute either operation. However, to reset
the ISM and to provide additional protection while V
ramping, one of the following conditions must be met:
and the device enters the array read mode.
Address
(3.3V)
Data
RP#
V
The likelihood of unwanted WRITE or ERASE opera-
•
•
After a power-up or RESET, the status register is reset,
NOTE:
CC
Power-Up/Reset Timing Diagram
RP# must be held LOW until V
functional level; or
CE# or WE# may be held HIGH and
RP# must be toggled from V
1. V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
goes HIGH.
CC
Note 1
must be within the valid operating range before RP#
Figure 2
t
RWH
t
AA
VALID
CC
VALID
-GND-V
CC
is at valid
©2001, Micron Technology, Inc.
UNDEFINED
CC
4Mb
.
CC
is