MT28F004B3VP-8 T Micron, MT28F004B3VP-8 T Datasheet

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MT28F004B3VP-8 T

Manufacturer Part Number
MT28F004B3VP-8 T
Description
SMART 3 BOOT BLOCK FLASH MEMORY
Manufacturer
Micron
Datasheet
FLASH MEMORY
Features
• Seven erase blocks:
• Smart 3 technology (B3):
• Compatible with 0.3µm Smart 3 device
• Advanced 0.18µm CMOS floating-gate process
• Address access time: 80ns
• 100,000 ERASE cycles
• Industry-standard pinouts
• Inputs and outputs are fully TTL-compatible
• Automated write and erase algorithm
• Two-cycle WRITE/ERASE sequence
• Byte- or word-wide READ and WRITE
• Byte-wide READ and WRITE only
NOTE:
09005aef8114a789
F45.fm - Rev. D 3/04 EN
Options
• Timing
• 80ns access
• Configurations
• 1 Meg x 8
• 512K x 16/1 Meg x 8
• Boot Block Starting Word Address
• Top (3FFFFh)
• Bottom (00000h)
• Operating Temperature Range
• Extended (-40ºC to +85ºC)
• Packages
TSOP and SOP packaging options
MT28F004B3
Plastic 40-pin (standard) TSOP Type I
Plastic 40-pin (lead free) TSOP Type
MT28F400B3
Plastic 48-pin (standard) TSOP Type I
Plastic 48-pin (lead free) TSOP Type I
Plastic 44-pin (standard) SOP
Plastic 44-pin (lead free) SOP
16KB/8K-word boot block (protected)
Two 8KB/4K-word parameter blocks
Four main memory blocks
3.3V ±0.3V V
3.3V ±0.3V
5V ±10%
(MT28F400B3, 256K x 16/512K x 8)
(MT28F004B3, 512K x 8)
1. This generation of devices does not support 12V
2. Contact Factory for availability
V
application production programming can be
used with no loss of performance.
PP
V
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.
production programming; however, 5V
PP
V
CC
PP
application/production programming
application programming
I
Marking
MT28F004B3
MT28F400B3
WG
SG
WP
SP
VG
ET
VP
-8
T
B
2
2
SMART 3 BOOT BLOCK FLASH MEMORY
V
1
PP
1
GENERAL DESCRIPTION
programmable memory devices containing 4,194,304
bits organized as 262,144 words (16 bits) or 524,288
bytes (8 bits). Writing or erasing the device is done with
either a 3.3V or 5V V
performed with a 3.3V V
advances, 5V V
duction programming. These devices are fabricated
with Micron’s advanced 0.18µm CMOS floating-gate
process.
into seven separately erasable blocks. To ensure that
critical firmware is protected from accidental erasure
or overwrite, the devices feature a hardware-protected
boot block. Writing or erasing the boot block requires
either applying a super-voltage to the RP# pin or driv-
ing WP# HIGH in addition to executing the normal
write or erase sequences. This block may be used to
store code implemented in low-level system recovery.
The remaining blocks vary in density and are written
and erased with no additional security measures.
for the latest data sheet.
MT28F004B3
MT28F400B3
3V ONLY, DUAL SUPPLY (SMART 3)
The MT28F004B3 (x8) and MT28F400B3 (x16/x8)
are nonvolatile, electrically block-erasable (flash),
The MT28F004B3 and MT28F400B3 are organized
Refer to Micron’s Web site (www.micron.com/flash)
40-Pin TSOP Type I
MT28F400B3SG-8 T
PP
Part Number Example:
is optimal for application and pro-
PP
44-Pin SOP
voltage, while all operations are
CC
. Due to process technology
©2003 Micron Technology, Inc. All rights reserved.
48-Pin TSOP Type I
4Mb

Related parts for MT28F004B3VP-8 T

MT28F004B3VP-8 T Summary of contents

Page 1

... Contact Factory for availability 09005aef8114a789 F45.fm - Rev. D 3/04 EN PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE. SMART 3 BOOT BLOCK FLASH MEMORY MT28F004B3 MT28F400B3 3V ONLY, DUAL SUPPLY (SMART 3) 40-Pin TSOP Type I ...

Page 2

... VPP 11 WP# 12 A18 ORDER NUMBER AND PART MARKING MT28F004B3VG-8 B MT28F004B3VP-8 B MT28F004B3VG-8 T MT28F004B3VP-8 T MT28F004B3VG-8 BET MT28F004B3VP-8 BET MT28F004B3VG-8 TET MT28F004B3VP-8 TET 2 44-Pin SOP VPP A17 ...

Page 3

BYTE# I/O Control Logic Addr. A0–A17/(A18) Buffer/ Latch A9 Power (Current) Control WP# CE# Command OE# Execution WE# Logic RP NOTE: 1. Does not apply to MT28F004B3. Figure 2: Functional Block Diagram 16KB Boot Block ...

Page 4

... V Supply Power Supply: +3.3V ±0.3V Supply Ground – No Connect: These pins may be driven or left unconnected. Micron Technology, Inc., reserves the right to change products or specifications without notice. 4 DESCRIPTION V (5V) and RP during a PPH 2 IH block and (12V), and HH during all other modes of operation ...

Page 5

... V X 70h 70h High 71h 71h High-Z ID Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc. All rights reserved. 4Mb DQ15/ A-1 High-Z High-Z A-1 High Data- ...

Page 6

... Micron Technology, Inc., reserves the right to change products or specifications without notice DQ0–DQ7 ...

Page 7

... ERASE operations. Two bits of the 8-bit status register are set and cleared entirely by the ISM. These bits indi- voltage cate whether the ISM is busy with a WRITE or ERASE PP Micron Technology, Inc., reserves the right to change products or specifications without notice. 7 4Mb pin before a WRITE or ERASE is PP ...

Page 8

... Main Block 60000h 5FFFFh 128KB Main Block 40000h 3FFFFh 128KB Main Block 20000h 1FFFFh 128KB Main Block 00000h Top Boot MT28F004B3/400B3xx-xxT Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc. All rights reserved. 4Mb ) be applied HH ...

Page 9

... ID register can be read while the device is in any mode. When A9 is returned to V device returns to the previous mode. Micron Technology, Inc., reserves the right to change products or specifications without notice. 9 4Mb ) to the A9 pin. Using this ID ...

Page 10

... Requests a halt of the ERASE and puts the device into the erase suspend mode. When the device is in this mode, only READ STATUS REGISTER, READ ARRAY and ERASE RESUME commands may be executed. Micron Technology, Inc., reserves the right to change products or specifications without notice. 10 4Mb ...

Page 11

... V PP pin is sampled for 3. after WRITE or ERASE CONFIRM is given must be cleared by CLEAR STATUS REGISTER RESET. PP Reserved for future use. Micron Technology, Inc., reserves the right to change products or specifications without notice. 11 4Mb status bits must ...

Page 12

... READ IA 70h READ X 50h 20h WRITE BA B0h WRITE X 40h WRITE WA 10h WRITE WA Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc. All rights reserved. 4Mb that the DATA NOTES SRD 4 D0h 5, 6 ...

Page 13

... ERASE CONFIRM PP Command sequencing error or WRITE/ERASE error Command sequencing error voltage error, with WRITE and ERASE errors Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc. All rights reserved. 4Mb PP status PP ...

Page 14

... Address Data NOTE must be within the valid operating range before RP# CC goes HIGH. NOTE: 1. Vcc must be within the valid operating range before RP# goes HIGH. Micron Technology, Inc., reserves the right to change products or specifications without notice. 14 4Mb valid func- CC -GND ...

Page 15

... Status register bits 3-5 must be cleared using CLEAR STATUS REGISTER. 09005aef8114a789 F45.fm - Rev. D 3/04 EN SMART 3 BOOT BLOCK FLASH MEMORY 1 Start (WRITE completed Micron Technology, Inc., reserves the right to change products or specifications without notice. 15 Figure 6: Complete WRITE Status-Check Sequence SR3 = 0? V Error ...

Page 16

... ERASE Resumed 16 Status-Check Sequence NO SR3 = 0? V Error PP YES YES SR4 Command Sequence Error NO NO SR5 = 0? BLOCK ERASE Error YES ERASE Successful Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc. All rights reserved. 4Mb ...

Page 17

... STATUS REGISTER READ NO SR7 = 1? YES NO SR6 = 1? YES WRITE FFh (READ ARRAY) Done NO Reading? YES WRITE D0h (ERASE RESUME) Resume ERASE 17 ERASE Completed Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc. All rights reserved. 4Mb ...

Page 18

... A MIN MAX UNITS Vcc - 0.2 – – 0. – 500 – 500 -10 10 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc. All rights reserved. 4Mb NOTES NOTES µ ...

Page 19

... 100 µ µ ±15 µ µA PP Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc. All rights reserved. 4Mb NOTES NOTES ...

Page 20

... AOE after CE# falls before ACE is affected. 20 ≤ +85°C); Vcc = +3.3V ±0.3V A -8/-8 ET MIN MAX UNITS 1,000 150 ns Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc. All rights reserved. 4Mb NOTES 2 2 ...

Page 21

... RWH VALID ADDRESS t RC VALID DATA -8/-8 ET MIN MAX 1,000 25 0 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc. All rights reserved. 4Mb DON UND UNITS ...

Page 22

... RWH VALID DATA -8/-8 ET MIN MAX 1,000 25 0 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc. All rights reserved. 4Mb DON’T CARE UNDEFINED UNITS ...

Page 23

... READ is CC Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc. All rights reserved. 4Mb NOTES 2 3 NOTES ...

Page 24

... V PP TYP MAX UNITS 7 0 1.5 14 – 1 – – 1 – Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc. All rights reserved. 4Mb NOTES NOTES ...

Page 25

... DON’T CARE -8/-8 ET MIN MAX 100 1,000 100 2 100 100 500 200 0 0 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc. All rights reserved. 4Mb UNITS µ ...

Page 26

... DON’T CARE -8/-8 ET MIN MAX 100 1,000 100 2 100 100 500 200 0 0 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc. All rights reserved. 4Mb UNITS µ ...

Page 27

... LEAD FINISH: TIN/LEAD PLATE PACKAGE WIDTH AND LENGTH DO NOT 0.25 INCLUDE MOLD PORTRUSION. ALLOWABLE 0.50 TYP PORTRUSION IS 0.25 PER SIDE. 0.20 ±0.05 1.20 MAX 0.10 +0.10 0.10 -0.05 DETAIL A Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc. All rights reserved. 4Mb 0.25 GAGE PLANE 0.5 ±0.1 0.80 ...

Page 28

... PLATED LEAD FINISH: 90% Sn, 10 100%Sn PACKAGE WIDTH AND LENGTH DO NOT 0.25 INCLUDE MOLD PORTRUSION. ALLOWABLE PORTRUSION IS 0.25 PER SIDE. 12.00 ±0.08 0.10 +0.10 0.10 -0.05 DETAIL A Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc. All rights reserved. 4Mb 0.25 GAGE PLANE 0.50 ±0.01 0.80 ...

Page 29

... S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900 E-mail: prodmktg@micron.com, Internet: http://www.micron.com, Customer Comment Line: 800-932-4992 Micron, the M logo, and the Micron logo are trademarks of Micron Technology, Inc. All other trademarks are the property of their respective owners. 09005aef8114a789 F45 ...

Page 30

... MT28F004B3 only available in VG package • Added 80ns access time for commercial and extended temperature ranges 09005aef8114a789 F45.fm - Rev. D 3/04 EN SMART 3 BOOT BLOCK FLASH MEMORY Micron Technology, Inc., reserves the right to change products or specifications without notice. 30 4Mb ©2003 Micron Technology, Inc. All rights reserved. ...

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