MT29F8G08FABWP-ET Micron, MT29F8G08FABWP-ET Datasheet

MT29F8G08FABWP-ET

Manufacturer Part Number

MT29F8G08FABWP-ET

Description

8Gb Mass Storage - OBSOLETE

Manufacturer

Micron

Datasheet

1.MT29F8G08FABWP-ET.pdf (57 pages)

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NAND Flash Memory

MT29F2G08AABWP/MT29F2G16AABWP

MT29F4G08BABWP/MT29F4G16BABWP

MT29F8G08FABWP

Features

• Organization:

• Read performance:

• Write performance:

• Endurance: 100,000 PROGRAM/ERASE cycles

• Data retention: 10 years

• First block (block address 00h) guaranteed to be

• V

• Automated PROGRAM and ERASE

• Basic NAND command set:

• New commands:

• Operation status byte provides a software method of

• Ready/busy# (R/B#) pin provides a hardware

• PRE pin: prefetch on power up

• WP# pin: hardware write protect

PDF: 09005aef818a56a7 / Source: 09005aef81590bdd

2gb_nand_m29b__1.fm - Rev. I 1/06 EN

• Page size:

• Block size: 64 pages (128K + 4K bytes)

• Device size: 2Gb: 2,048 blocks; 4Gb: 4,096 blocks;

• Random read: 25µs

• Sequential read: 30ns (3V x8 only)

• Page program: 300µs (TYP)

• Block erase: 2ms (TYP)

valid without ECC (up to 1,000 PROGRAM/ERASE

cycles)

• PAGE READ, RANDOM DATA READ, READ ID,

• PAGE READ CACHE MODE

• READ UNIQUE ID (contact factory)

• READ ID2 (contact factory)

detecting:

• PROGRAM/ERASE operation completion

• PROGRAM/ERASE pass/fail condition

• Write-protect status

method of detecting PROGRAM or ERASE cycle

completion

x8: 2,112 bytes (2,048 + 64 bytes)

x16: 1,056 words (1,024 + 32 words)

8Gb: 8,192 blocks

READ STATUS, PROGRAM PAGE, RANDOM DATA

INPUT, PROGRAM PAGE CACHE MODE, INTER-

NAL DATA MOVE, INTERNAL DATA MOVE with

RANDOM DATA INPUT, BLOCK ERASE, RESET

: 2.7V–3.6V

Products and specifications discussed herein are subject to change by Micron without notice.

2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory

Figure 1:

Options

• Density:

• Device width:

• Configuration:

• V

• Second generation die

• Package:

• Operating temperature:

2Gb (single die)

4Gb (dual-die stack)

8Gb (quad-die stack)

x16

48 TSOP type I (lead-free)

48 TSOP type I (NEW version,

48 TSOP type I (contact factory)

Commercial (0°C to 70°C)

Extended temperature (-40°C to +85°C)

Micron Technology, Inc., reserves the right to change products or specifications without notice.

: 2.7V–3.6V

8Gb device only, lead-free)

48-Pin TSOP Type 1

# of

die

CE#

# of

R/B#

# of

MT29F2GxxAAB

MT29F4GxxBAB

MT29F8GxxFAB

MT29Fxx08x

MT29Fxx16x

Marking

Features

None

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