MT29F8G08FABWP-ET Micron, MT29F8G08FABWP-ET Datasheet - Page 12

• Manufacturer Part Number: MT29F8G08FABWP-ET
• Description: 8Gb Mass Storage - OBSOLETE
• Manufacturer: Micron

Figure 7:
Table 2:
PDF: 09005aef818a56a7 / Source: 09005aef81590bdd
2gb_nand_m29b__2.fm - Rev. I 1/06 EN
Cycle
First
Second
Third
Fourth
Fifth
Cache Register
Data Register
2,048 blocks
per device
Array Addressing: MT29F2G08AxB
Array Organization for MT29F2G08AxB (x8)
RA19
RA27
LOW
LOW
I/O7
CA7
Note:
RA18
RA26
LOW
LOW
I/O6
CA6
CAx = column address; RAx = row address.
2,048
2,048
1 Block
RA17
RA25
LOW
LOW
I/O5
CA5
2,112 bytes
2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
RA16
RA24
LOW
LOW
I/O4
CA4
12
64
64
Micron Technology, Inc., reserves the right to change products or specifications without notice.
CA11
RA15
RA23
LOW
I/O3
CA3
64 pages = 1 block
1 page
1 block
1 device = (2K + 64) bytes x 64 pages
I/O 7
I/O 0
CA10
RA14
RA22
LOW
= (2K + 64 bytes)
= (2K + 64) bytes x 64 pages
= (128K + 4K) bytes
= 2,112 Mb
I/O2
CA2
x 2,048 blocks
(128K + 4K) bytes
©2004 Micron Technology, Inc. All rights reserved.
RA13
RA21
LOW
I/O1
CA1
CA9
Addressing
RA12
RA20
RA28
I/O0
CA0
CA8