MT29F8G08FABWP-ET Micron, MT29F8G08FABWP-ET Datasheet - Page 18

• Manufacturer Part Number: MT29F8G08FABWP-ET
• Description: 8Gb Mass Storage - OBSOLETE
• Manufacturer: Micron

Minimum Rp
Figure 12:
Figure 13:
PDF: 09005aef818a56a7 / Source: 09005aef81590bdd
2gb_nand_m29b__2.fm - Rev. I 1/06 EN
READY/BUSY# Open Drain
t
R and
Notes: 1.
t
F
V
Rp (MIN, 3.3V part) =
Where ΣIL is the sum of the input currents of all devices tied to the R/B# pin.
2.
3.
4.
5. See TC values in Figure 15 on page 19 for approximate Rp value and TC.
GND
3.50
3.00
2.50
2.00
1.50
1.00
0.50
0.00
V
CC
t
t
impedance.
t
t
R and
R dependent on external capacitance and resistive loading and output transistor
R primarily dependent on external pull-up resistor and external capacitive loading.
F ≈ 10ns at 3.3V.
-1
I
OL
t
F calculated at 10 percent and 90 percent points.
0
Device
2
V
CC
R/B#
Open drain output
t
F
2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
(MAX) – V
4
Rp
I
t
OL
TC
R
+ ΣI
0
18
OL
L
(MAX)
2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
=
4
8mA + ΣI
3.2V
6
L
©2004 Micron Technology, Inc. All rights reserved.
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