MT29F8G08FABWP-ET Micron, MT29F8G08FABWP-ET Datasheet - Page 2

• Manufacturer Part Number: MT29F8G08FABWP-ET
• Description: 8Gb Mass Storage - OBSOLETE
• Manufacturer: Micron

Part Numbering Information
Figure 2:
Valid Part Number Combinations
PDF: 09005aef818a56a7 / Source: 09005aef81590bdd
2gb_nand_m29b__1.fm - Rev. I 1/06 EN
Micron Technology
Product Family
29F = Single-Supply NAND Flash Memory
Density
2G = 2Gb
4G = 4Gb
8G = 8Gb
Device Width
08 = 8 bits
16 = 16 bits
Classification
A
B
F
Operating Voltage Range
A = 3.3V (2.70V–3.60V)
# of die # of CE# # of R/B#
Part Number Chart
1
2
4
1
1
2
1
1
2
Micron
densities. (See Figure 2.)
After building the part number from the part numbering chart above, verify that the part
number is valid using the Micron Parametric Part Search Web site at
http://www.micron.com/partsearch
If the device required is not on this list, contact the factory.
MT 29F 2G 08
Common
Common
Common
I/O
®
NAND Flash devices are available in several different configurations and
A
2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
A
B
WP
2
to verify that the part number is offered and valid.
Micron Technology, Inc., reserves the right to change products or specifications without notice.
ES
Part Numbering Information
Production Status
Blank = Production
ES = Engineering Sample
MS = Mechanical Sample
Operating Temperature Range
Blank = Commercial (0°C to +70°C)
ET = Extended (–40° to +85°C)
Reserved for Future Use
Reserved for Future Use
Package Codes
WP = 48-pin TSOP I (lead-free)
WA = 48-pin TSOP I (new version,
WG = 48-pin TSOP I (contact factory)
Generation
A = 1st Generation Die
B = 2nd Generation Die
C = 3rd Generation Die
8Gb device only, lead-free)
©2004 Micron Technology, Inc. All rights reserved.