MT29F8G08FABWP-ET Micron, MT29F8G08FABWP-ET Datasheet - Page 21

• Manufacturer Part Number: MT29F8G08FABWP-ET
• Description: 8Gb Mass Storage - OBSOLETE
• Manufacturer: Micron

Power-On AUTO-READ
Figure 16:
Figure 17:
PDF: 09005aef818a56a7 / Source: 09005aef81590bdd
2gb_nand_m29b__2.fm - Rev. I 1/06 EN
First Page Power-On AUTO-READ (3V V
AC Waveforms During Power Transitions
Notes: 1. Verified per device characterization; not 100 percent tested on all devices.
During power-on, with the PRE pin at V
first page of the memory array to the data register without requiring a command or
address-input sequence. As V
tor initiates the power-on AUTO-READ function.
R/B# will stay LOW (
See Table 18 on page 41 for the
HIGH, RE# can be pulsed to output the first page of data.
The PRE function is not supported on extended-temperature devices.
WP#
WE#
R/B#
WE#
R/B#
I/Ox
ALE
Vcc
CLE
CE#
PRE
RE#
2. The PRE function is not supported on extended-temperature devices.
Vcc
3V device: ≈ 2.5V
t
RPRE) while the first page of data is copied into the data register.
2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
HIGH
10µs
≈ 2.5V
CC
21
1
t
CC
RPRE value. Once the READ is complete and R/B# goes
reaches approximately 2.5V, the internal voltage detec-
only)
t RPRE
Micron Technology, Inc., reserves the right to change products or specifications without notice.
CC
, 3V V
CC
devices automatically transfer the
Don't Care
1st
©2004 Micron Technology, Inc. All rights reserved.
3V device: ≈ 2.5V
2nd
Undefined
Bus Operation
3rd
.....
Undefined
n th