MT29F8G08FABWP-ET Micron, MT29F8G08FABWP-ET Datasheet - Page 35

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MT29F8G08FABWP-ET

Manufacturer Part Number
MT29F8G08FABWP-ET
Description
8Gb Mass Storage - OBSOLETE
Manufacturer
Micron
Datasheet
WRITE PROTECT Operation
Figure 30:
Figure 31:
Figure 32:
PDF: 09005aef818a56a7 / Source: 09005aef81590bdd
2gb_nand_m29b__2.fm - Rev. I 1/06 EN
ERASE Enable
ERASE Disable
PROGRAM Enable
The WRITE PROTECT feature protects the device against inadvertent PROGRAM and
ERASE operations. All PROGRAM and ERASE operations are disabled when WP# is LOW.
For WRITE PROTECT timing details, see Figures 30 through 33.
WE#
WP#
R/B#
WE#
WP#
R/B#
WE#
WP#
R/B#
I/Ox
I/Ox
I/Ox
t WW
t WW
t WW
80h
60h
60h
2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
35
D0h
D0h
10h
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Command Definitions
©2004 Micron Technology, Inc. All rights reserved.

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