BF554 Siemens Semiconductor Group, BF554 Datasheet
BF554
Manufacturer Part Number
BF554
Description
NPN Silicon RF Transistor (For general small-signal RF applications up to 300 MHz in amplifier/ mixer and oscillator circuits)
Manufacturer
Siemens Semiconductor Group
Datasheet
1.BF554.pdf
(4 pages)
NPN Silicon RF Transistor
Type
BF 554
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Total power dissipation, T
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient
1)
2)
Semiconductor Group
For general small-signal RF applications
up to 300 MHz in amplifier,
mixer and oscillator circuits
For detailed information see chapter Package Outlines.
Package mounted on alumina 15 mm 16.7 mm 0.7 mm.
Marking
CC
2)
A
25 ˚C
Ordering Code
(tape and reel)
Q62702-F1042
1
Symbol
V
V
V
I
P
T
T
R
C
j
stg
CE0
CB0
EB0
tot
th JA
Pin Configuration
B
1
Values
20
30
5
30
280
150
– 65 … + 150
450
E
2
C
3
Unit
V
mA
mW
˚C
K/W
Package
SOT-23
BF 554
07.94
1)
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BF554 Summary of contents
Page 1
NPN Silicon RF Transistor For general small-signal RF applications up to 300 MHz in amplifier, mixer and oscillator circuits Type Marking BF 554 CC Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipation ...
Page 2
Electrical Characteristics ˚C, unless otherwise specified. A Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector cutoff current = current ...
Page 3
Total power dissipation P Collector current Semiconductor Group = current gain h tot Collector-emitter saturation voltage = f ...
Page 4
Collector cutoff current I CB0 = Collector-base capacitance MHz Semiconductor Group = Transition frequency 100 MHz ...