Product Description
Stanford Microdevices’ SHF-0186K is a high performance GaAs
Heterostructure FET housed in a low-cost surface-mount plastic
package. HFET technology improves breakdown voltage while
minimizing Schottky leakage current for higher power added
efficiency and improved linearity.
Output power at 1dB compression for the SHF-0186K is +28
dBm when biased for Class AB operation at 8V and 100mA.
The +40 dBm third order intercept makes it ideal for high dynamic
range, high intercept point requirements. It is well suited for
use in both analog and digital wireless communication
infrastructure and subscriber equipment including cellular PCS,
CDPD, wireless data, and pagers.
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
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DC-3 GHz, 0.5 Watt
AlGaAs/GaAs HFET
Product Features
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Technology
Patented AlGaAs/GaAs Heterostructure FET
High Drain Efficiency: Up to 46% at Class AB
Analog and Digital Wireless System
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+28 dBm P1dB Typical
+40 dBm Output IP3 Typical
17 dB Gain at 900 MHz (Application circuit)
15 dB Gain at 1900 MHz (Application circuit)
Cellular PCS, CDPD, Wireless Data, Pagers
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