NE500199 NEC Electronics, NE500199 Datasheet
NE500199
Manufacturer Part Number
NE500199
Description
(NE500100 / NE500199) C-Band Medium Power GaAs MESFET
Manufacturer
NEC Electronics
Datasheet
1.NE500199.pdf
(4 pages)
FEATURES
• HIGH OUTPUT POWER: 1 W
• HIGH LINEAR GAIN: 9.0 dB
• HIGH EFFICIENCY: 37% (PAE)
• INDUSTRY STANDARD PACKAGING
• THIS DEVICE IS ALSO AVAILABLE AS A
The NE8500199 is a medium power GaAs MESFET designed
for up to a 1W output stage or as a driver for higher power
devices. The device has no internal matching and can be
used at frequencies from UHF to 8.5 GH
available in the “99” package or in chip form. The chip is a two-
cell die; bonding both cells delivers the rated performance.
The NE850 Series Transistors are manufactured to NEC's
stringent quality assurance standards to ensure highest reli-
ability and consistent superior performance.
ELECTRICAL CHARACTERISTICS
DESCRIPTION
TWO-CELL CHIP: NE8500100
SYMBOLS
P
I
R
I
G
DSS
V
g
OUT
ADD
DS
C-BAND MEDIUM POWER GaAs MESFET
TH
m
P
L
Power Out at Fixed Input Power
Linear Gain
Collector Efficiency
Drain Source Current
Saturated Drain Current
Pinch-off Voltage
Transconductance
Thermal Resistance
CHARACTERISTICS
PACKAGE OUTLINE
PART NUMBER
Z
. The device is
(T
C
= 25 C)
UNITS
dBm
C/W
mA
mA
mS
dB
%
V
Note:
1. Operation in excess of any one of these parameters may result in
RECOMMENDED OPERATING LIMITS
ABSOLUTE MAXIMUM RATINGS
(T
SYMBOLS
SYMBOLS
C
G
permanent damage.
T
V
T
= 25 C unless otherwise noted)
V
V
COMP
V
R
T
I
P
I
GS
STG
DS
CH
GD
DS
DS
GS
CH
G
T
MIN
28.5
330
-3.0
Drain to Source Voltage
Channel Temperature
Gain Compression
Gate Resistance
California Eastern Laboratories
Drain to Source Voltage
Gate to Drain Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
00 (Chip), 99
NE8500199
NE8500100
PARAMETERS
TYP
29.5
200
300
9.0
PARAMETERS
37
MAX
825
-1.0
60
NE8500100
NE8500199
V
UNITS MIN
DS
V
K
V
V
dB
V
DS
UNITS
C
TEST CONDITIONS
DS
DS
= 10 V; I
mA
Channel to Case
W
P
V
V
V
A
= 2.5 V; I
C
C
= 2.5 V; V
= 2.5 V; I
IN
f = 7.2 GHz
R
= 21.0 dBm
9
G
= 1K
1
-65 to +175
DSQ
RATINGS
TYP MAX
DS
IDSS
DS
1
GS
175
-18
-12
6.0
6.0
15
= 200 mA
= 4 mA
= I
= 0 V
DSS
130
3.0
10
4
Related parts for NE500199
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Manufacturer:
NEC Electronics
Datasheet:
Part Number:
Description:
Manufacturer:
NEC Electronics
Datasheet:
Part Number:
Description:
Resistance inclusion NPN silicon transistor
Manufacturer:
NEC Electronics
Datasheet:
Part Number:
Description:
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR
Manufacturer:
NEC Electronics
Part Number:
Description:
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR
Manufacturer:
NEC Electronics
Part Number:
Description:
Medium Speed Switching Resistor Built-In Type NPN Transistor
Manufacturer:
NEC Electronics
NE500199 Summary of contents
Page 1
C-BAND MEDIUM POWER GaAs MESFET FEATURES • HIGH OUTPUT POWER • HIGH LINEAR GAIN: 9.0 dB • HIGH EFFICIENCY: 37% (PAE) • INDUSTRY STANDARD PACKAGING • THIS DEVICE IS ALSO AVAILABLE AS A TWO-CELL CHIP: NE8500100 DESCRIPTION The ...
Page 2
TYPICAL SCATTERING PARAMETERS 10.1 GHz 10.1 GHz 0.1 GHz - 8500100 (2 Cells 200 mA ...
Page 3
TYPICAL SCATTERING PARAMETERS 10.1 GHz 10.1 GHz S 0.1 GHz 8500100 (1 Cell 100 mA DS ...
Page 4
TYPICAL SCATTERING PARAMETERS 10.0 GHz 0.1 GHz - 10.0 GHz - 8500199 200 FREQUENCY ...