BLF0810S-180 Philips Semiconductors, BLF0810S-180 Datasheet
BLF0810S-180
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BLF0810S-180 Summary of contents
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... DATA SHEET M3D379 BLF0810-180; BLF0810S-180 Base station LDMOS transistors Product specification Supersedes data of 2003 May 09 DISCRETE SEMICONDUCTORS M3D461 2003 Jun 12 ...
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... common source test circuit (MHz) (V) = 890. 890.1 27 140 (PEP) 2 890 27 30 (AV) 2 Product specification BLF0810-180; BLF0810S-180 PIN DESCRIPTION 1 drain 2 gate 3 source; connected to flange Top view MBL105 Fig.2 Simplified outline SOT502B (BLF0810S-180 (W) (dB) (%) (dBc ACPR 750 3 (dBc ...
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... GSth I drain-source leakage current DSS I on-state drain current DSX I gate leakage current GSS g forward transconductance fs R drain-source on-state resistance DSon 2003 Jun 12 BLF0810-180; BLF0810S-180 PARAMETER CONDITIONS (AV), note (AV), note CONDITIONS ...
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... Mode of operation: CDMA, IS95 (pilot, paging, sync and traffic codes 8 to 13) G gain power p drain efficiency D ACPR 750 adjacent channel power ratio 2003 Jun 12 BLF0810-180; BLF0810S-180 = 25 C; unless otherwise specified. h CONDITIONS (PEP 125 W (PEP) L VSWR = through all phases ...
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... C. h (5) gain (6) gain MDB160 handbook, halfpage (3) (1) (2) 100 150 P L (PEP) (W) = 890.1 MHz Product specification BLF0810-180; BLF0810S-180 (dBc (1) ( 100 P L (PEP 890.0 MHz 890.1 MHz. ...
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... Fig.8 MDB164 handbook, halfpage ACPR (dBc (AV) (dBm (1) T (2) T Fig.10 CDMA IS95 ACPR distortion as a function . DQ 6 Product specification BLF0810-180; BLF0810S-180 0 20 (2) (1) (5) 40 (4) (6) ( 100 P L (PEP) ( 890.0 MHz 890.1 MHz. ...
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... 0. (GHz) = 1125 mA Class-AB operation Values comprised for different parameters. Fig.12 Load impedance as a function of frequency drain Z L MGS998 7 Product specification BLF0810-180; BLF0810S-180 0.5 1 0.85 0.9 0.95 f (GHz 1125 mA (series components); typical values. ...
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... 2003 Jun Fig.14 Test circuit for 860 to 900 MHz. 8 Product specification BLF0810-180; BLF0810S-180 C15 L12 C17 L10 C9 C10 L11 L14 L15 L16 C13 C18 C11 C12 C16 L13 C14 Vsupply RF out ...
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... BLF0810-180 input Rev C BLF0810-180 input Rev C 40 Fig.15 Component layout for 860 to 900 MHz test circuit. 9 Product specification BLF0810-180; BLF0810S-180 BLF0810-180 output Rev C C15 C17 C17 C9 C10 C13 C18 C11 C12 C16 C16 C14 BLF0810-180 output Rev C ...
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... C4, C9, C10, C11, C12 tantalum capacitor C5, C18 air trimmer capacitor C7, C8 multilayer ceramic chip capacitor R1 potentiometer Q1 7808 voltage regulator Q2 BLF0810-180/BLF0810S-180 LDMOS transistor L1 stripline; note 2 L2 stripline; note 2 L3 stripline; note 2 L4 stripline; note 2 L5 ferroxcube L6 stripline; note 2 L7 stripline ...
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... 19.96 9.50 9.53 1.14 19.94 5.33 19.66 9.30 9.25 0.89 18.92 4.32 0.786 0.374 0.375 0.045 0.785 0.210 0.774 0.366 0.364 0.035 0.745 0.170 REFERENCES JEDEC JEITA 11 Product specification BLF0810-180; BLF0810S-180 3.38 1.70 34.16 9.91 27.94 0.25 3.12 1.45 33.91 9.65 0.133 0.067 1.345 0.390 1.100 ...
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... 19.96 9.50 9.53 1.14 19.94 5.33 19.66 9.30 9.25 0.89 18.92 4.32 0.786 0.374 0.375 0.785 0.045 0.210 0.774 0.366 0.364 0.035 0.745 0.170 REFERENCES JEDEC JEITA 12 Product specification BLF0810-180; BLF0810S-180 1.70 20.70 9.91 0.25 1.45 20.45 9.65 0.067 0.815 0.390 0.010 0.057 0.805 0.380 EUROPEAN ISSUE DATE PROJECTION SOT502B 99-12-28 03-01-10 ...
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... Product specification BLF0810-180; BLF0810S-180 DEFINITION These products are not Philips Semiconductors ...
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... Philips Semiconductors Base station LDMOS transistors 2003 Jun 12 BLF0810-180; BLF0810S-180 NOTES 14 Product specification ...
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... Philips Semiconductors Base station LDMOS transistors 2003 Jun 12 BLF0810-180; BLF0810S-180 NOTES 15 Product specification ...
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... Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. ...