BLF2047L Philips Semiconductors, BLF2047L Datasheet - Page 2

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BLF2047L

Manufacturer Part Number
BLF2047L
Description
UHF power LDMOS transistor
Manufacturer
Philips Semiconductors
Datasheet

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Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
transistors encapsulated in a 2-lead SOT502A flange
package with a ceramic cap. The common source is
connected to the mounting flange.
QUICK REFERENCE DATA
RF performance at T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
1999 Dec 06
Two-tone, class-AB
V
V
I
T
T
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
MODE OF OPERATION
D
stg
j
High power gain
Easy power control
Excellent ruggedness
Source on underside eliminates DC isolators, reducing
common mode inductance
Designed for broadband operation (1.8 to 2 GHz)
Internal input and output matching for high gain and
efficiency.
Common source class-AB operation for PCN and PCS
applications in the 1800 to 2000 MHz frequency range.
DS
GS
UHF power LDMOS transistor
SYMBOL
h
= 25 C in a common source test circuit.
f
drain-source voltage
gate-source voltage
DC drain current
storage temperature
junction temperature
1
= 2000; f
(MHz)
2
f
= 2000.1
PARAMETER
CAUTION
2
V
(V)
26
PINNING
DS
handbook, halfpage
PIN
1
2
3
65 (PEP)
(W)
Fig.1 Simplified outline SOT502A.
P
L
Top view
drain
gate
source, connected to flange
65
>10.5
MIN.
(dB)
G
p
1
2
DESCRIPTION
65
9
200
15
150
Product specification
MAX.
>30
MBK394
(%)
3
D
BLF2047L
V
V
A
C
C
(dBc)
UNIT
d
im
25

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