BLF2047L Philips Semiconductors, BLF2047L Datasheet - Page 3

• Manufacturer Part Number: BLF2047L
• Description: UHF power LDMOS transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. Determined under specified RF operating conditions.
CHARACTERISTICS
T
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. T
Ruggedness in class-AB operation
The BLF2047L is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under
the following conditions: V
1999 Dec 06
R
V
V
I
I
I
g
R
C
Two-tone, class-AB
MODE OF OPERATION
j
DSS
DSX
GSS
fs
SYMBOL
SYMBOL
(BR)DSS
GSth
th j-h
= 25 C unless otherwise specified.
DSon
rss
UHF power LDMOS transistor
thermal resistance from junction to
heatsink
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
on-state drain current
gate leakage current
forward transconductance
drain-source on-state resistance
feedback capacitance
PARAMETER
PARAMETER
DS
f
1
= 26 V; I
= 2000; f
(MHz)
DQ
f
2
= 2000.1
= 350 mA; P
T
V
V
V
V
V
V
V
V
h
GS
DS
GS
GS
GS
DS
GS
GS
L
V
= 25 C, P
= 65 W; f = 2000 MHz.
(V)
26
h
DS
= 0; I
= 10 V; I
= 0; V
= V
= 15 V; V
= 10 V; I
= V
= 0; V
= 25 C; R
3
GS th
GS th
CONDITIONS
CONDITIONS
D
DS
DS
= 1.4 mA
D
D
+ 9 V; V
+ 9 V; I
tot
= 26 V
= 26 V; f = 1 MHz
(mA)
350
I
= 140 mA
= 5 A
DS
DQ
= 152 W, note 1
th j-h
= 0
D
= 1.15 K/W, unless otherwise specified.
DS
= 5 A
65 (PEP)
= 10 V
(W)
P
L
65
1.5
18
MIN.
>10.5
(dB)
G
VALUE
p
1.15
4
0.17
3.4
TYP.
Product specification
>30
(%)
BLF2047L
D
3.5
10
250
MAX.
UNIT
K/W
(dBc)
V
V
A
nA
S
pF
d
UNIT
A
im
25