3SK135A NEC, 3SK135A Datasheet

no-image

3SK135A

Manufacturer Part Number
3SK135A
Description
RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD
Manufacturer
NEC
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
3SK135A
Manufacturer:
NEC
Quantity:
36 000
Part Number:
3SK135A-T1
Manufacturer:
NEC
Quantity:
20 000
Part Number:
3SK135A-T2
Manufacturer:
ATI
Quantity:
900
Part Number:
3SK135A-T2
Manufacturer:
NEC
Quantity:
20 000
Document No. P10411EJ1V0DS00 (1st edition)
(Previous No. TN-1758)
Date Published August 1995 P
Printed in Japan
FEATURES
• Suitable for use as RF amplifier in UHF TV tuner.
• Low C
• High G
• Low NF : 2.7 dB TYP.
ABSOLUTE MAXIMUM RATINGS (T
Drain to Source Voltage
Gate1 to Source Voltage
Gate2 to Source Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (T
I
N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR
DSS
Drain to Source Breakdown Voltage
Drain Current
Gate1 to Source Cutoff Voltage
Gate2 to Source Cutoff Voltage
Gate1 Reverse Current
Gate2 Reverse Current
Forward Transter Admittance
Input Capacitance
Output capacitance
Reverse Transfer Capacitance
Power Gain
Noise Figure
Class
Marking
I
DSS
Classification
rss
CHARACTERISTIC
ps
: 0.02 pF TYP.
: 18 dB TYP.
0.01 to 2
L/LS*
U65
RF AMP. FOR UHF TV TUNER
V
V
V
I
P
T
T
D
ch
stg
DSX
G1S
G2S
T
K/KS*
1 to 6
U66
*
*
SYMBOL
V
V
BV
| y
I
I
G
G1S(off)
G2S(off)
NF*
I
C
C
–65 to +150
*R
G1SS
G2SS
C
DSS
oss
ps
rss
DSX
fs
iss
L
*
DATA SHEET
|
4PIN MINI MOLD
A
200
150
20
25
A
10
10
10 k
= 25 ˚C)
* Old specification/New specification
= 25 ˚C)
MIN.
0.01
1.5
0.5
20
14
16
MOS FIELD EFFECT TRANSISTOR
mW
mA
˚ C
˚ C
V
V
V
TYP.
0.02
2.7
1.0
18
18
MAX.
–2.0
–0.7
0.03
2.5
1.5
4.5
6
20
20
PACKAGE DIMENSIONS
UNIT
mA
ms
nA
nA
pF
pF
pF
dB
dB
V
V
V
V
V
V
V
V
V
V
f = 1 kHz
V
I
V
f = 900 MHz
2.8
D
1.5
in millimeters
DS
G1S
DS
DS
DS
DS
DS
DS
DS
= 10 mA, f = 1 MHz
3SK135A
+0.2
–0.3
= 10 V, V
+0.2
–0.1
= 10 V, V
= 10 V, V
= 5 V, V
= 5 V, V
= 0, V
= 0, V
= 10 V, V
= V
TEST CONDITIONS
G2S
0.4
G1S
G2S
0.4
+0.1
–0.05
= –2 V, I
G2S
G2S
G2S
G2S
G1S
+0.1
= 8 V, V
= 8 V, V
G2S
–0.05
= 4 V, I
= 4 V, I
= 4 V, V
= 4 V, I
= 4 V, I
= 4 V,
©
1. Source
2. Drain
3. Gate 2
4. Gate 1
D
= 10 A
D
D
D
D
G2S
G1S
= 10 mA,
= 10 mA,
G1S
= 10 A
= 10 A
= 0
= 0
= 0
1995

Related parts for 3SK135A

3SK135A Summary of contents

Page 1

... I 20 G2SS | 1.5 2.5 iss C 0.5 1.0 1.5 oss C 0.02 0.03 rss NF* 2.7 4.5 K/KS* U66 * Old specification/New specification 3SK135A PACKAGE DIMENSIONS in millimeters +0.2 2.8 –0.3 +0.2 1.5 –0.1 +0.1 0.4 –0.05 +0.1 0.4 5˚ 5˚ –0.05 1. Source 2. Drain 5˚ 5˚ 3. Gate 2 4. Gate 1 UNIT TEST CONDITIONS – G1S G2S D mA ...

Page 2

... OUTPUT CAPACITANCE vs. GATE 2 TO SOURCE VOLTAGE MHz 3.0 4.0 –1 – Gate2 to Source Voltage – V G2S 3SK135A G1S –0.1 V –0.2 V –0.3 V –0 G2S 0 +1 G2S = 4 V G2S 1 ...

Page 3

... POWER GAIN AND NOISE FIGURE vs. GATE2 TO SOURCE VOLTAGE –10 2 –20 0 –2.0 0 2.0 4.0 V – Gate2 to Source Voltage – V G2S f = 900 MHz ( G2S ( G2S 6.0 8.0 3SK135A 3 ...

Page 4

... 0.087 72 18.279 –43 0.207 64 19.600 –56 0.444 55 21.366 –67 0.851 48 22.388 –79 1.380 43 22.717 –92 2.120 43 21.911 –103 2.855 3SK135A 22 86 1.023 0 102 0.977 –4 56 0.977 –7 167 0.966 –10 –153 0.933 –11 –160 0.912 –15 –166 0.902 –15 –178 0.891 – ...

Page 5

... MHz G AND NF TEST CIRCUIT G2S 1 000 000 INPUT 000 pF V G1S OUTPUT ~ RFC 1 000 0 ( G2S D 3SK135A 5 ...

Page 6

... The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. 2 3SK135A M4 94.11 ...

Related keywords