3SK176A NEC, 3SK176A Datasheet

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3SK176A

Manufacturer Part Number
3SK176A
Description
RF AMP. AND MIXER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD
Manufacturer
NEC
Datasheet

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Document No. P10567EJ2V0DS00 (2nd edition)
(Previous No. TD-2263)
Date Published August 1995 P
Printed in Japan
FEATURES
• High Power Gain:
• Low Noise Figure:
• Automatically Mounting: Embossed Type Taping
• Suitable for use as RF amplifier and Mixer in CATV tuner.
• Small Package:
ABSOLUTE MAXIMUM RATINGS (T
Drain to Source Voltage
Gate1 to Source Voltage
Gate2 to Source Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (T
I
DSX
Drain to Source Breakdown
Voltage
Drain Current
Gate1 to Source Cutoff Voltage
Gate2 to Source Cutoff Voltage
Gate1 Reverse Current
Gate2 Reverse Current
Forward Transfer Admittance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Power Gain
Noise Figure 1
Noise Figure 2
Class
Marking
I
DSX
* R
Classification
(mA)
CHARACTERISTIC
L
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR
10 k
U87/UHG*
1.0 to 6.0
U87
RF AMP. AND MIXER FOR CATV TUNER
G
NF = 2.0 dB TYP. (f = 470 MHz)
NF = 1.0 dB TYP. (f = 55 MHz)
4 Pins Mini Mold
SYMBOL
PS
BV
I
V
V
I
I
| y
C
C
C
G
NF1
NF2
G1SS
G2SS
DSX
G1S(off)
G2S(off)
iss
oss
rss
PS
= 24 dB TYP. (f = 470 MHz)
fs
DSX
V
V
V
I
P
T
T
|
D
ch
stg
DSX
G1S
G2S
D
4.0 to 10.0
U88/UHH*
MIN.
21.0
U88
DATA SHEET
–55 to +125
1.0
2.2
1.3
4 PINS MINI MOLD
18
22
0
0
A
8 ( 10)*
8 ( 10)*
A
= 25 C)
200
125
18
25
= 25 C)
0.015
TYP.
25.5
24.0
MOS FIELD EFFECT TRANSISTOR
2.7
1.6
2.0
1.0
* Old Specification/New Specification
mW
mA
MAX.
V
V
V
+1.0
+1.0
C
C
0.03
3.2
1.9
3.5
2.5
10
20
20
UNIT
mA
mS
nA
nA
pF
pF
dB
dB
dB
pF
V
V
V
V
f = 1 MHz
V
f = 470 MHz
V
f = 55 MHz
V
V
V
V
V
V
V
f = 1 kHz
DS
DS
DS
G1S
DS
DS
DS
DS
DS
DS
PACKAGE DIMENSIONS
= 6 V, V
= 6 V, V
= 6 V, V
= 5 V, V
= 6 V, V
= 6 V, V
= 0, V
= 0, V
= 5 V, V
= V
G2S
TEST CONDITIONS
(Unit: mm)
G2S
G1S
3SK176A
1. Source
2. Drain
3. Gate2
4. Gate1
= –2 V, I
G2S
G2S
G2S
G1S
G2S
G1S
G2S
= 0, V
= 0, V
= 3 V, I
= 3 V, I
= 3 V, I
= 0.75 V, V
= 3 V, I
= 3 V, I
= 4 V, I
2.8
1.5
+0.2
–0.1
+0.2
–0.1
G1S
G2S
D
= 10 A
D
D
D
D
D
= 10 V
= 10 V
D
= 10 mA
= 10 mA
= 10 mA
= 10 A
= 10 A
= 10 mA
©
G2S
= 4 V
1995
1989

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3SK176A Summary of contents

Page 1

... C 1.3 1.6 1.9 pF oss C 0.015 0.03 pF rss G 21.0 24 NF1 2.0 3.5 dB NF2 1.0 2.5 dB U88/UHH* U88 4.0 to 10.0 * Old Specification/New Specification 3SK176A PACKAGE DIMENSIONS (Unit: mm) +0.2 2.8 –0.1 +0.2 1.5 –0.1 5° 5° 5° 5° 1. Source 2. Drain 3. Gate2 4. Gate1 TEST CONDITIONS – G1S G2S 0. G1S ...

Page 2

... V 2 G1S INPUT CAPACITANCE vs. GATE2 TO SOURCE VOLTAGE 5 4.0 3.0 2.0 1 –1 G2S 3SK176A = 0 G2S 0.6 V 0 – Drain to Source Voltage – G2S 1.0 2.0 – Gate 1 to Source Voltage – ...

Page 3

... V G2S V V G2S DS RFC 2.2 k Ferrite Beads 1 500 pF 1 000 000 pF V G1S 3SK176A 470 MHz ( G2S NF 2.0 4.0 6.0 8.0 – Gate 2 to Source Voltage – V OUTPUT 3 ...

Page 4

... AND NF TEST CIRCUIT 470 MHz 000 pF INPUT 000 000 pF V G1S 4 V G2S 1 000 pF Ferrite Beads 40 pF OUTPUT 000 000 1.2 mm U.E 1.2 mm U.E REC 2.2 3 3SK176A ...

Page 5

... [MEMO] 3SK176A 5 ...

Page 6

... The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. 2 3SK176A M4 94.11 ...

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