3SK194 Hitachi Semiconductor, 3SK194 Datasheet
3SK194
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3SK194 Summary of contents
Page 1
... Silicon N-Channel Dual Gate MOS FET Application VHF/UHF TV tuner RF amplifier Outline MPAK-4 3 3SK194 Source 4 2. Gate1 3. Gate2 4. Drain ...
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... Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature 2 Symbol Ratings G1S V 10 G2S Pch 150 Tch 125 Tstg –55 to +125 ...
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... Ciss — 2.8 3.5 Coss — 1.8 2.5 Crss — 0.02 — — NF — 3.0 4.5 NF — 3.0 4 — NF — 1.0 2.5 3SK194 Unit Test conditions 200 –5 V G1S G2S G2S G1S G1S G2S DS ...
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... Maximum Channel Power Dissipation Curve 300 200 100 0 50 Ambient Temperature Drain Current vs. Gate 1 to Source Voltage G2S 0 – Gate 1 to Source Voltage 100 150 (V) G1S ...
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... D Power Gain vs. Drain Current (V) Drain Current I Power Gain vs. Drain to Source Voltage Drain to Source Voltage V 3SK194 G2S f = 200 MHz (mA G2S 200 MHz ...
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... Power Gain vs. Drain to Source Voltage Drain to Source Voltage V Noise Figure vs. Drain Current Drain Current G2S 900 MHz ( G2S ...
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... Noise Figure vs. Drain to Source Voltage 10 V G2S 900 MHz Drain to Source Voltage V DS 3SK194 = (V) 7 ...
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Hitachi Code JEDEC EIAJ Weight (reference ...
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... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...