SLD1132VS

Manufacturer Part NumberSLD1132VS
Description635nm Red Laser Diode
ManufacturerSony Corporation
SLD1132VS datasheet
 


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635nm Red Laser Diode
Description
The SLD1132VS is a red laser diode designed for
laser pointers. Its wavelength (635nm typ.) is
shortened by 35nm and visibility is increased by
approximately 7 times, compared to the conven-
tional visible laser diode (670nm typ.).
Features
• Short wavelength (635nm typ.)
• Small package ( 5.6)
• Fundamental traverse/single longitudinal mode
Applications
Laser pointers
Structure
• AlGaInP quantum well structure laser diode
• PIN photo diode for optical power output monitor
Recommended Optical Power Output
3mW
Absolute Maximum Ratings
• Optical power output
Po
• Reverse voltage
V
R
• Operating temperature
Topr
• Storage temperature
Tstg
Connection Diagram
COMMON
3
PD
2
1
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
5
mW
LD
2
V
PD
15
V
–10 to +40 °C
–40 to +85 °C
Pin Configuration
LD
– 1 –
SLD1132VS
M-274
2
1
3
1. LD cathode
2. PD anode
3. COMMON
Bottom View
E94Y01C98-PS

SLD1132VS Summary of contents

  • Page 1

    ... Red Laser Diode Description The SLD1132VS is a red laser diode designed for laser pointers. Its wavelength (635nm typ.) is shortened by 35nm and visibility is increased by approximately 7 times, compared to the conven- tional visible laser diode (670nm typ.). Features • Short wavelength (635nm typ.) • ...

  • Page 2

    ... Tc: Case temperature Min. Typ. Max 2.4 3.0 625 635 645 ±80 ±3 ±4 0.15 0.35 0.8 20 0.05 0.10 0.30 Safety goggles for protection from laser beam Lens Optical material IR fluorescent plate Optical board SLD1132VS Unit degree degree µm degree degree mW/mA µm mA ...

  • Page 3

    ... Tc – Case temperature [°C] = 0°C 25°C 40° –60 – Forward current [mA] Monitor current vs. Temperature characteristics 0.4 0.3 0.2 0 –20 – 3 – SLD1132VS Far field pattern (FFP 3mW 25°C –40 – Angle [degree 3mW – Case temperature [° ...

  • Page 4

    ... Temperature dependence of spectrum Po = 3mW 620 630 Tc = 40° 25° 0°C 640 650 – Wavelength [nm] – 4 – SLD1132VS 660 ...

  • Page 5

    ... Power dependence of spectrum Tc = 25°C 620 630 Po = 5mW Po = 3mW Po = 1mW 640 650 – Wavelength [nm] – 5 – SLD1132VS 660 ...

  • Page 6

    ... Package Outline Unit: mm Distance = 1.35 ± 0.08 SONY CODE EIAJ CODE JEDEC CODE M-274 Reference Slot 1.0 0 5.6 – 0.025 Window Glass 4.4 MAX 3.7 MAX 1.0 MIN Reference Plane LD Chip & Photo Diode 3 – 0.45 Optical PCD 2.0 M-274 PACKAGE WEIGHT – 6 – 0.5 MIN 0.3g SLD1132VS ...