2SA1530A ETC, 2SA1530A Datasheet

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2SA1530A

Manufacturer Part Number
2SA1530A
Description
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
Manufacturer
ETC
Datasheet

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DESCRIPTION
silicon PNP epitaxial transistor,
It is designed for low frequency voltage application.
FEATURE
● Small collector to emitter saturation voltage.
●Excellent linearity of DC forward gain.
●Super mini package for easy mounting
APPLICATION
For Hybrid IC,small type machine low frequency voltage
Amplify application.
2SA1530A is a super mini package resin sealed
.
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
Symbol
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
C to E Saturation Vlotage
Gain bandwidth product
Collector output capacitance
Noise figure
Parameter
V
V
V
T
I
P
CBO
T
CEO
EBO
stg
O
c
j
VCE(sat)=-0.3Vmax(@Ic=-100mA、IB=-10mA)
Collector to Base voltage
Collector to Emitter voltage
Emitter to Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Parameter
(Ta=25℃)
ISAHAYA ELECTRONICS CORPORATION
(Ta=25℃)
-55~+150
Ratings
VCE(sat)
+150
V(
-150
Symbol
-60
-50
200
-6
I
I
hFE
hFE
Cob
BR
CBO
EBO
NF
fT
)
CEO
I
V
V
V
V
I
V
V
V
C
C
Unit
= -100μA , R
mA
mW
CB
EB
CE
CE
CE
CB
CE
= -100mA , I
V
V
V
= -4V , I
= -60V , I
= -6V , I
= -6V , I
= -6V , I
= -6V , I
= -6V , I
OUTLINE DRAWING
SILICON PNP EPITAXIAL TYPE(Ultra super mini type)
※) It shows hFE classification in below table.
hFE Item
www.DataSheet.co.kr
C
C
C
E
E
E
= 10mA
= 0.3mA,f=100Hz,RG=10kΩ
= 0mA
= -1mA
= -0.1mA
= 0mA,f=1MHz
E
= 0mA
B
BE
Test conditions
= -10mA
= ∞
Item
FOR LOW FREQUENCY AMPLIFY APPLICATION
TERMINAL CONNECTER
120~270
Q
JEITA:SC-59
①:BASE
②:EMITTER
③:COLLECTOR
〈SMALL-SIGNAL TRANSISTOR〉
180~390
R
Min
-50
120
70
-
-
-
-
-
-
270~560
S
2SA1530A
Limits
Typ
200
-
-
-
-
-
-
4
-
Unit:mm
Max
-0.1
-0.1
560
-0.3
20
-
-
-
-
MHz
Unit
μA
μA
dB
pF
V
V
-
-
Datasheet pdf - http://www.DataSheet4U.net/

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2SA1530A Summary of contents

Page 1

... DESCRIPTION 2SA1530A is a super mini package resin sealed silicon PNP epitaxial transistor designed for low frequency voltage application. . FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=-0.3Vmax(@Ic=-100mA、IB=-10mA) ●Excellent linearity of DC forward gain. ●Super mini package for easy mounting ...

Page 2

... TRANSISTOR〉 COLLECTOR DISSIPATION VS.AM BIENT TEM PERTURE 250 200 150 100 BIENT TEM PERTURE Ta (℃ ) ISAHAYA ELECTRONICS CORPORATION FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Ultra super mini type) 100 125 150 www.DataSheet.co.kr 2SA1530A Datasheet pdf - http://www.DataSheet4U.net/ ...

Page 3

... TRANSISTOR〉 ISAHAYA ELECTRONICS CORPORATION FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Super mini type) www.DataSheet.co.kr 2SA1530A Datasheet pdf - http://www.DataSheet4U.net/ ...

Page 4

Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! · ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility ...

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