NE434S01 NEC, NE434S01 Datasheet

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NE434S01

Manufacturer Part Number
NE434S01
Description
C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Manufacturer
NEC
Datasheet
Document No. P11344EJ3V0DS00 (3rd edition)
Date Published October 1996 P
Printed in Japan
DESCRIPTION
hetero junction to create high mobility electrons. Its excellent
low noise and high associated gain make it suitable for TVRO
and another commercial systems.
FEATURES
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
RECOMMENDED OPERATING CONDITION (T
NE434S01-T1
NE434S01-T1B
Drain to Source Voltage
Drain Current
Input Power
PART NUMBER
The NE434S01 is a Herero Junction FET that utilizes the
Super Low Noise Figure & High Associated Gain
Gate Width: W
CHARACTERISTIC
NF = 0.35 dB TYP., G
g
= 280 P m
Tape & reel 1000 pcs./reel
Tape & reel 4000 pcs./reel
C BAND SUPER LOW NOISE AMPLIFIER
SUPPLYING FORM
HETERO JUNCTION FIELD EFFECT TRANSISTOR
a
SYMBOL
= 15.5 dB TYP. at f = 4 GHz
V
P
V
V
T
I
P
T
DS
D
I
in
DS
GS
D
stg
tot
ch
N-CHANNEL HJ-FET
–65 to +125
A
MIN.
DATA SHEET
= 25 q q q q C)
–3.0
I
300
125
4.0
DSS
MARKING
A
E
TYP.
= 25 °C)
15
mW
mA
2
qC
qC
V
V
MAX.
2.5
20
0
0.125 ± 0.05
2
dBm
Unit
mA
V
PACKAGE DIMENSIONS
NE434S01
0.65 TYP.
1
2.0 ± 0.2
E
1.9 ± 0.2
4.0 ± 0.2
(Unit: mm)
1.6
3
0.4 MAX.
©
4
1. Source
2. Drain
3. Source
4. Gate
1996

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NE434S01 Summary of contents

Page 1

... HETERO JUNCTION FIELD EFFECT TRANSISTOR C BAND SUPER LOW NOISE AMPLIFIER DESCRIPTION The NE434S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO and another commercial systems. ...

Page 2

... A MIN. TYP. MAX. I 0.5 10 SGO 150 DSS ð0.2 ð0.9 ð2.5 GS(off 0.35 0.45 G 13.0 15.5 a NE434S01 UNIT TEST CONDITIONS ð 100 mA, ...

Page 3

... S ˜ NE434S01 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE –0.2 V –0.4 V –0 Drain to Source Voltage - V DS MAXIMUM AVAILABLE GAIN, FORWARD INSERTION GAIN vs. FREQUENCY MSG. ...

Page 4

... Rmax +45˚ –45˚ –0.5 Rmax. = 1.0 NE434S01 Marker 1: 4 GHz 2: 8 GHz 3: 12 GHz 4: 16 GHz 5: 18 GHz S 12 +90˚ +45˚ –45˚ ...

Page 5

... NE434S01 S 22 ANG. MAG. ANG. (deg.) (deg.) 68.4 .415 –27.5 65.9 .479 –35.8 57.5 .423 –43.0 54.1 .429 –47.9 49.6 .426 –51.7 45.8 .406 – ...

Page 6

... NE434S01 Delay Mason’ .036 23.90 .036 8.50 1.13 .064 5.83 .042 5.04 .042 4.47 .046 3.12 .038 27.689 2.47 .038 25.567 1.94 .039 27.520 1.87 .040 25.660 1.56 .041 25.850 1.33 .043 24.669 1.18 .041 23.510 1 ...

Page 7

... Noise Parameters <Noise Parameters> Freq (GHz) NF (dB) min 2.0 0.32 4.0 0.35 6.0 0.40 8.0 0.46 10.0 0.56 12.0 0.67 14.0 0.80 16.0 0.94 18.0 1.10 * opt. Ga (dB) MAG. 16.5 0.77 15.5 0.58 14.2 0.43 13.1 0.32 12.0 0.27 10.9 0.27 9.9 0.34 8.9 0.48 8.0 0.69 NE434S01 R /50 n ANG. (deg.) 15 0.19 43 0.18 82 0.13 127 0.08 175 0.07 –139 0.10 –100 0.17 –70 0.29 –56 0.46 7 ...

Page 8

... TYPICAL MOUNT PAD LAYOUT 8 2.4 mm TYP. NE434S01 ...

Page 9

... Storage conditions and relative humidity less. Note: Do not apply more than a single process at once, except for “Partial heating method”. PRECAUTION: Avoid high static voltage and electric fields, because this device is Hetero Junction field effect transistor with shottky barrier gate. Soldering conditions NE434S01 Symbol IR30-00 9 ...

Page 10

... NE434S01 ...

Page 11

... NE434S01 11 ...

Page 12

... The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. Caution NE434S01 M4 96. 5 ...

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