BFP490 Siemens Semiconductor Group, BFP490 Datasheet

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BFP490

Manufacturer Part Number
BFP490
Description
NPN Silicon RF Transistor (Q62702-F1721)
Manufacturer
Siemens Semiconductor Group
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
BFP490
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
BFP490E6327
Manufacturer:
ST
0
Semiconductor Group
1) TS is measured on the emitter lead at the soldering point
NPN Silicon RF Transistor
Preliminary data
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BFP 490
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation, T
Junction temperature
Ambient temperature
Storage temperature
Semiconductor Group
Thermal Resistance
Junction - soldering point
For high power amplifiers
Compression point P
Transition frequency f
Gold metalization for high reliability
SIEGET
maxim. available Gain G
Siemens Grounded Emitter Transistor
25 GHz f
mounted on alumina 15 mm x 16,7 mm x 0.7 mm
T
Marking Ordering Code
AOs
- Line
25 - Line
-1dB
Q62702-F1721
T
> 17 GHz
S
ma
= 26.5 dBm at 1.8 GHz
1)
85 °C
= 9.5 dB at 1.8 GHz
Pin Configuration
1 = B
1
1
2 = E
Symbol
V
V
V
I
I
P
T
T
T
R
C
B
j
A
stg
CEO
CBO
EBO
tot
thJS
3 = C
SIEGET 25
5
4 = C
-65 ...+150
-65 ...+150
Value
1000
600
150
4.5
1.5
15
60
65
4
5 = E
1
Sep-09-1998
VPW05980
BFP 490
Package
SCT-595
1998-11-01
2
Unit
V
mA
mW
°C
K/W
3

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BFP490 Summary of contents

Page 1

NPN Silicon RF Transistor Preliminary data For high power amplifiers Compression point P -1dB maxim. available Gain G Transition frequency f > 17 GHz T Gold metalization for high reliability SIEGET 25 - Line Siemens Grounded Emitter Transistor 25 GHz ...

Page 2

Electrical Characteristics at T Parameter DC characteristics Collector-emitter breakdown voltage mA Collector-base cutoff current Emitter-base cutoff current ...

Page 3

Common Emitter S-Parameters GHz MAG ANG 150mA CE C -159.8 0.01 0.648 -178.5 0.1 0.916 173.7 0.3 0.921 168.2 0.5 0.92 159.1 0.9 0.921 157 1 0.919 147.1 1.5 0.928 138.8 2 ...

Page 4

SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 0.451 fA VAF = 24.665 1.9962 - VAR = 16.035 1.339 - RBM = 2.1262 CJE = 1.227 ...

Page 5

For non-linear simulation: Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators. If you need simulation of thereverse characteristics, add the diode with the C’-E’- diode data between collector and emitter. Simulation of package is not necessary ...

Page 6

Total power dissipation P * Package mounted on epoxy 1200 mW 1000 900 800 700 600 T 500 A 400 300 200 100 Permissible Pulse Load K 0.5 0.2 ...

Page 7

Power gain 200 ...

Page 8

Noise figure Sopt 6.5 dB 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1 0.45 GHz 1 0.9 GHz f ...

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