C1815

Manufacturer Part NumberC1815
DescriptionSilicon NPN Epitaxail Type(for Audio Frequency General Purpose Amplifier Applications)
ManufacturerToshiba Semiconductor
C1815 datasheet
 
1
Page 1
2
Page 2
3
Page 3
4
Page 4
Page 1/4

Download datasheet (659Kb)Embed
Next
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
Audio Frequency General Purpose Amplifier Applications
Driver Stage Amplifier Applications
High voltage and high current: V
CEO
I
C
Excellent h
linearity : h
= 100 (typ.)
FE
FE (2)
at V
= 6 V, I
CE
: h
(I
= 0.1 mA)/h
FE
C
= 0.95 (typ.)
Low noise: NF = 1dB (typ.) at f = 1 kHz
Complementary to 2SA1015 (O, Y, GR class)
Absolute Maximum Ratings
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Base intrinsic resistance
Noise figure
Note: h
classification O: 70~140, Y: 120~240, GR: 200~400, BL: 350~700
FE
2SC1815
= 50 V (min),
= 150 mA (max)
= 150 mA
C
(I
= 2 mA)
FE
C
(Ta = 25°C)
Symbol
Rating
Unit
V
60
V
CBO
V
50
V
CEO
V
5
V
EBO
I
150
mA
C
I
50
mA
B
P
400
mW
C
T
125
°C
j
−55~125
T
°C
stg
www.DataSheet.co.kr
Symbol
Test Condition
= 60 V, I
= 0
I
V
CBO
CB
E
= 5 V, I
= 0
I
V
EBO
EB
C
h
FE (1)
= 6 V, I
= 2 mA
V
CE
C
(Note)
= 6 V, I
= 150 mA
h
V
FE (2)
CE
C
= 100 mA, I
= 10 mA
V
I
CE (sat)
C
B
= 100 mA, I
= 10 mA
V
I
BE (sat)
C
B
= 10 V, I
= 1 mA
f
V
T
CE
C
= 10 V, I
= 0, f = 1 MHz
C
V
ob
CB
E
= 10 V, I
= −1 mA
V
CE
E
r
bb’
f = 30 MHz
= 6 V, I
= 0.1 mA
V
CE
C
NF
f = 1 kHz, R
= 10 kΩ
G
1
2SC1815
Unit: mm
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)
Min
Typ.
Max
Unit
μA
0.1
μA
0.1
70
700
25
100
0.1
0.25
V
1.0
V
80
MHz
2.0
3.5
pF
Ω
50
1.0
10
dB
2007-11-01
Datasheet pdf - http://www.DataSheet4U.net/

C1815 Summary of contents

  • Page 1

    ... MHz − bb’ MHz = 0 kHz kΩ 2SC1815 Unit: mm JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1B Weight: 0.21 g (typ.) Min Typ. Max Unit ⎯ ⎯ μA 0.1 ⎯ ⎯ μA 0.1 ⎯ 70 700 ⎯ ...

  • Page 2

    ... Datasheet pdf - http://www.DataSheet4U.net/ ...

  • Page 3

    ... Datasheet pdf - http://www.DataSheet4U.net/ ...

  • Page 4

    ... Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. www.DataSheet.co.kr 4 2SC1815 20070701-EN GENERAL 2007-11-01 Datasheet pdf - http://www.DataSheet4U.net/ ...