C1815 Toshiba Semiconductor, C1815 Datasheet
C1815
Manufacturer Part Number
C1815
Description
Silicon NPN Epitaxail Type(for Audio Frequency General Purpose Amplifier Applications)
Manufacturer
Toshiba Semiconductor
Datasheet
1.C1815.pdf
(4 pages)
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Audio Frequency General Purpose Amplifier Applications
Driver Stage Amplifier Applications
•
•
•
•
Absolute Maximum Ratings
Electrical Characteristics
High voltage and high current: V
Excellent h
Low noise: NF = 1dB (typ.) at f = 1 kHz
Complementary to 2SA1015 (O, Y, GR class)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Base intrinsic resistance
Noise figure
Note: h
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
FE
Characteristics
Characteristics
classification O: 70~140, Y: 120~240, GR: 200~400, BL: 350~700
FE
linearity : h
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
: h
at V
= 0.95 (typ.)
FE (2)
FE
CE
(I
C
I
(Ta = 25°C)
= 100 (typ.)
= 6 V, I
C
= 0.1 mA)/h
CEO
= 150 mA (max)
(Ta = 25°C)
V
V
Symbol
Symbol
h
h
V
V
V
CE (sat)
BE (sat)
I
I
= 50 V (min),
FE (1)
FE (2)
T
C
CBO
EBO
r
CBO
CEO
P
NF
EBO
I
I
T
f
bb’
C
stg
C
B
T
ob
C
2SC1815
j
(Note)
= 150 mA
FE
V
V
V
V
I
I
V
V
V
f = 30 MHz
V
f = 1 kHz, R
(I
C
C
CB
EB
CE
CE
CE
CB
CE
CE
C
= 100 mA, I
= 100 mA, I
−55~125
= 2 mA)
Rating
= 5 V, I
= 60 V, I
= 6 V, I
= 6 V, I
= 10 V, I
= 10 V, I
= 10 V, I
= 6 V, I
150
400
125
60
50
50
5
1
www.DataSheet.co.kr
G
C
C
C
C
Test Condition
E
C
E
E
= 0
= 10 kΩ
= 2 mA
= 150 mA
= 0.1 mA
B
B
= 0
= 1 mA
= 0, f = 1 MHz
= −1 mA
= 10 mA
= 10 mA
Unit
mW
mA
mA
°C
°C
V
V
V
Weight: 0.21 g (typ.)
JEDEC
JEITA
TOSHIBA
Min
70
25
80
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
100
0.1
2.0
1.0
50
⎯
⎯
⎯
⎯
⎯
2-5F1B
TO-92
SC-43
2007-11-01
2SC1815
Max
0.25
700
0.1
0.1
1.0
3.5
10
⎯
⎯
⎯
Unit: mm
MHz
Unit
μA
μA
pF
dB
Ω
V
V
Datasheet pdf - http://www.DataSheet4U.net/
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C1815 Summary of contents
Page 1
... MHz − bb’ MHz = 0 kHz kΩ 2SC1815 Unit: mm JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1B Weight: 0.21 g (typ.) Min Typ. Max Unit ⎯ ⎯ μA 0.1 ⎯ ⎯ μA 0.1 ⎯ 70 700 ⎯ ...
Page 2
... Datasheet pdf - http://www.DataSheet4U.net/ ...
Page 3
... Datasheet pdf - http://www.DataSheet4U.net/ ...
Page 4
... Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. www.DataSheet.co.kr 4 2SC1815 20070701-EN GENERAL 2007-11-01 Datasheet pdf - http://www.DataSheet4U.net/ ...