IMX9 Rohm, IMX9 Datasheet

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IMX9

Manufacturer Part Number
IMX9
Description
General Purpose Transistor
Manufacturer
Rohm
Datasheet

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Transistors
General purpose transistor
(isolated dual transistors)
IMX9
1) Two 2SD2114K chips in a SMT package.
2) Mounting possible with SMT3 automatic mounting
3) Transistor elements are independent, eliminating
4) Mounting cost and area can be cut in half.
Epitaxial planar type
NPN silicon transistor
The following characteristics apply to both Tr
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Output On-resistance
Features
Structure
Absolute maximum ratings (Ta = 25 C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Storage temperature
Electrical characteristics (Ta = 25 C)
machine.
interference.
200mW per element must not be exceeded.
Parameter
Parameter
Symbol
V
V
V
Tstg
Pd
Tj
CBO
CEO
EBO
I
C
Symbol
V
BV
BV
BV
Cob
Ron
I
I
CE(sat)
h
CBO
EBO
f
FE
T
CBO
CEO
EBO
1
and Tr
300(TOTAL)
Min.
560
25
20
12
55~ 150
Limits
500
150
25
20
12
2
.
Typ.
0.18
350
0.8
8
2700
Max.
0.5
0.5
0.4
External dimensions (Units : mm)
Unit
mW
mA
All terminals have same dimensions
ROHM : SMT6
EIAJ : SC-74
V
V
V
C
C
MHz
Unit
0.95 0.95
(4)
(3)
pF
2.9±0.2
1.9±0.2
0.3
V
V
V
V
A
A
(5)
(2)
0.1
0.05
I
I
I
V
V
I
V
V
V
I
(6)
(1)
C
C
E
C
B
CB
EB
CE
CE
CB
/I
10 A
1mA, V
10 A
1mA
B
Abbreviated symbol: X9
10V
20V
3V, I
10V, I
10V, I
500mA/20mA
Equivalent circuit
C
E
i
E
0.15 0.06
Tr
10mA
100mVrms, f 1kHz
0A, f 1MHz
2
50mA, f 100MHz
(4)
Conditions
(3)
0.1
1.1 0.2
0.8±0.1
(5)
(2)
0.1
Tr
0~0.1
(6)
(1)
1
IMX9

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IMX9 Summary of contents

Page 1

... V CBO CEO EBO I 0.5 A CBO I 0.5 A EBO V 0.18 0.4 V CE(sat) h 560 2700 FE f 350 MHz T Cob 8 pF Ron 0.8 IMX9 1.1 0.2 0.1 0.8±0.1 (5) (6) 0~0.1 (1) (2) 0.1 0.1 0.15 0.06 0.05 Abbreviated symbol: X9 Equivalent circuit (4) (5) ( (3) (2) (1) Conditions 1mA 20V ...

Page 2

... Measured using 1000 pulse current. 500 200 100 100 100 200 5001000 (mA) COLLECTOR CURRENT : I C Fig.6 Collector-emitter saturation voltage vs. collector current ( ) IMX9 Measured using pulse current. 1.0 1.2 1.4 ( Measured using pulse current. (mA) C ...

Page 3

... COLLECTOR CURRENT : I C Fig.9 Base-emitter saturation voltage vs. collector current ( ) 100 1MHz 0.5 0.2 0 100 0.01 0.02 0.05 0.1 0.2 0.5 (V) BASE CURRENT : I CB Fig.12 Output-on resistance vs. base current IMX9 Measured using pulse current. 5001000 (mA) C Ta=25 C f=1kHz Vi=100mV( rms (mA) B ...

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