PBSS2540E Philips Semiconductors, PBSS2540E Datasheet
PBSS2540E
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PBSS2540E Summary of contents
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... PBSS2540E 40 V, 500 mA NPN low V Rev. 01 — 4 May 2005 1. Product profile 1.1 General description NPN low V plastic package. PNP complement: PBS3540E. 1.2 Features Low collector-emitter saturation voltage V High collector current capability: I High collector current gain (h High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1 ...
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... Pinning Description base emitter collector Ordering information Package Name Description SC-75 plastic surface mounted package; 3 leads Marking codes Marking code 1S Rev. 01 — 4 May 2005 PBSS2540E www.DataSheet4U.com (BISS) transistor CEsat Simplified outline Symbol sym021 Version SOT416 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. ...
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... T amb junction temperature ambient temperature storage temperature 300 P tot (mW) (1) 200 (2) 100 Rev. 01 — 4 May 2005 PBSS2540E www.DataSheet4U.com (BISS) transistor CEsat Min Max - 500 - 1 - 100 [ 150 ...
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... Fig 2. Transient thermal impedance from junction to ambient as a function of pulse time; typical values 9397 750 15063 Product data sheet 40 V, 500 mA NPN low V Thermal characteristics Parameter Conditions thermal resistance from in free air junction to ambient Rev. 01 — 4 May 2005 PBSS2540E www.DataSheet4U.com (BISS) transistor CEsat Min Typ Max [ 833 [ 500 006aaa413 2 ...
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... 100 100 mA 100 MHz MHz Rev. 01 — 4 May 2005 PBSS2540E (BISS) transistor CEsat Min Typ Max - - 100 - - 100 200 - - 100 - - 50 - ...
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... I (mA amb ( ( ( Fig 6. Collector-emitter saturation voltage as a function of collector current; typical values Rev. 01 — 4 May 2005 PBSS2540E www.DataSheet4U.com (BISS) transistor CEsat 006aaa381 (1) (2) ( (mA 100 C 006aaa383 (1) (2) ...
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... V ( amb ( ( ( Fig 10. Collector-emitter saturation resistance as a function of collector current; typical values Rev. 01 — 4 May 2005 PBSS2540E www.DataSheet4U.com (BISS) transistor CEsat 006aaa385 (1) (2) ( (mA 100 006aaa387 (1) ...
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... V, 500 mA NPN low V 1.8 1.4 3 1.75 0.9 1.45 0 Dimensions in mm [1] Section 16. 2.20 0.60 1.10 0. 2.00 0.85 1.50 0.50 1 (3x) MSA438 0.60 (3x) 1.90 Rev. 01 — 4 May 2005 PBSS2540E www.DataSheet4U.com (BISS) transistor CEsat 0.95 0.60 0.45 0.15 2 0.30 0.25 0.15 0.10 04-11-04 Packing quantity 3000 10000 -115 -135 solder lands solder resist occupied area solder paste © Koninklijke Philips Electronics N.V. 2005. All rights reserved ...
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... Product data sheet 40 V, 500 mA NPN low V Data sheet status Change notice Product data sheet - Rev. 01 — 4 May 2005 PBSS2540E www.DataSheet4U.com (BISS) transistor CEsat Doc. number Supersedes 9397 750 15063 - © Koninklijke Philips Electronics N.V. 2005. All rights reserved. ...
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... Trademarks Notice — All referenced brands, product names, service names and trademarks are the property of their respective owners. Rev. 01 — 4 May 2005 PBSS2540E www.DataSheet4U.com (BISS) transistor CEsat © Koninklijke Philips Electronics N.V. 2005. All rights reserved ...
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... Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 15 Trademarks Contact information . . . . . . . . . . . . . . . . . . . . 10 PBSS2540E 40 V, 500 mA NPN low V CEsat © Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice ...