VEC2605 Sanyo Semicon Device, VEC2605 Datasheet

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VEC2605

Manufacturer Part Number
VEC2605
Description
P-Channel and N-Channel Silicon MOSFET General-Purpose Switching Device Applications
Manufacturer
Sanyo Semicon Device
Datasheet
Ordering number : ENN8197
VEC2605
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : BV
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
[P-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Best suited for DC/DC converters.
The VEC2605 incorporates a P-channel MOSFET and an N-channel MOSFET that feature low ON-resistance
and ultrahigh-speed switching, thereby enabling high-density mounting.
2.5V drive.
Mounting height 0.75mm.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Electric Co.,Ltd. Semiconductor Company
V (BR)DSS
R DS (on)1
R DS (on)2
V GS (off)
P-Channel and N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Symbol
Symbol
V DSS
V GSS
I GSS
I DSS
Coss
Crss
Ciss
Tstg
I DP
Tch
P D
yfs
I D
I D =--1mA, V GS =0
V DS =- -20V, V GS =0
V GS = 8V, V DS =0
V DS =- -10V, I D =--1mA
V DS =- -10V, I D =--500mA
I D =--500mA, V GS =--4V
I D =--300mA, V GS =--2.5V
V DS =- -10V, f=1MHz
V DS =- -10V, f=1MHz
V DS =- -10V, f=1MHz
PW 10 s, duty cycle 1%
Mounted on a ceramic board (900mm
VEC2605
Conditions
Conditions
2
0.8mm)1unit
12505PF TS IM TB-00001142
P-channel
min
0.72
--0.4
--20
--55 to +150
- -
0.8
20
10
--1
--4
Ratings
150
typ
380
540
115
1.2
23
15
N-channel
Continued on next page.
max
--1.4
0.9
500
760
20
10
12
10
3
--1
No.8197-1/6
Unit
Unit
m
m
pF
pF
pF
W
V
V
A
A
V
V
S
C
C
A
A

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VEC2605 Summary of contents

Page 1

... Ordering number : ENN8197 VEC2605 Features Best suited for DC/DC converters. • The VEC2605 incorporates a P-channel MOSFET and an N-channel MOSFET that feature low ON-resistance • and ultrahigh-speed switching, thereby enabling high-density mounting. 2.5V drive. • Mounting height 0.75mm. • Specifications Absolute Maximum Ratings at Ta=25 C Parameter ...

Page 2

... Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : VEC8 VEC2605 Symbol Conditions t d (on) See specified Test Circuit See specified Test Circuit (off) See specified Test Circuit See specified Test Circuit =--10V -4V -1A Qgs ...

Page 3

... V OUT PW=10 s D.C. 1% P.G [Pch] --0.6 --0.7 --0.8 --0.9 --1.0 IT08592 [Pch] --1.5 --2.0 IT08594 [Pch] Ta=25 C --6 --7 --8 --9 --10 IT08707 V DD =10V =1. =6. OUT G VEC2605 3.0 2.5 2.0 1.5 1.0 0 0.1 0.2 Drain-to-Source Voltage 3 =10V 2.5 2.0 1.5 1.0 0 0.5 1.0 Gate-to-Source Voltage (on ...

Page 4

... Diode Forward Voltage Time -- --10V -- (on --0.1 Drain Current VEC2605 [Pch 100 120 --60 IT08598 [Pch 1 0.1 IT08600 [Pch] ...

Page 5

... Ta= Single pulse 2 Mounted on a ceramic board (900mm --0. --0.01 --0.1 --1.0 Drain-to-Source Voltage 1.0 0.8 0.6 0.4 0 100 Ambient Temperature VEC2605 [Pch] 2 f=1MHz 1000 100 --15 0 IT08606 [Pch] 4 =10V I D =3A 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 1.2 1.4 1.6 ...

Page 6

... Note on usage : Since the VEC2605 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’ ...

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