BU4506 Philips Semiconductors, BU4506 Datasheet

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BU4506

Manufacturer Part Number
BU4506
Description
Silicon Diffused Power Transistor
Manufacturer
Philips Semiconductors
Datasheet
Philips Semiconductors
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional
tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
PINNING - SOT199
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
THERMAL RESISTANCES
1 Turn-off current.
July 1999
Silicon Diffused Power Transistor
SYMBOL
V
V
I
I
P
V
I
t
SYMBOL
V
V
I
I
I
I
-I
P
T
T
SYMBOL
R
R
C
CM
Csat
f
case isolated
C
CM
B
BM
PIN
BM
stg
j
CESM
CEO
tot
CEsat
CESM
CEO
tot
th j-hs
th j-a
1
2
3
base
collector
emitter
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value
Total power dissipation
Storage temperature
Junction temperature
PARAMETER
Junction to heatsink
Junction to ambient
DESCRIPTION
PIN CONFIGURATION
1
case
1
CONDITIONS
V
T
I
f = 16 kHz
I
CONDITIONS
V
T
CONDITIONS
with heatsink compound
in free air
C
Csat
hs
hs
1
BE
BE
= 3 A; I
2
= 0 V
= 0 V
= 3.0 A;f = 16 kHz
25 ˚C
3
25 ˚C
B
= 0.75 A
SYMBOL
b
TYP.
TYP.
MIN.
Product specification
300
-65
3.0
32
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BU4506AF
MAX.
MAX.
MAX.
1500
e
1500
c
800
450
800
150
150
3.0
2.8
45
45
5
8
5
8
3
5
4
-
-
Rev 1.000
UNIT
UNIT
UNIT
K/W
K/W
ns
˚C
˚C
W
W
V
V
A
A
V
A
V
V
A
A
A
A
A

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BU4506 Summary of contents

Page 1

... T 25 ˚ 0. kHz I = 3.0 A kHz Csat PIN CONFIGURATION case CONDITIONS ˚C hs CONDITIONS with heatsink compound in free air 1 Product specification BU4506AF TYP. MAX. UNIT - 1500 V - 800 3 300 450 ns SYMBOL c ...

Page 2

... CONDITIONS Csat 50v 100-200R 250 Horizontal 200 Oscilloscope 100 Vertical Fig.2. Oscilloscope display for V CEOsust 2 Product specification BU4506AF MIN. TYP. MAX. UNIT - - 2500 - 22 - MIN. TYP. MAX. UNIT - - 1 2.0 mA 7.5 13.5 - 800 - - - - 3 ...

Page 3

... IB2 0.01 VCESAT / V + 150 v nominal 1 adjust for ICsat 0.8 Lc 0.6 0.4 Cfb 0.2 0 0.1 Fig.8. Typical collector-emitter saturation voltage. 3 Product specification BU4506AF hFE VCE = 1 V 0.1 1 Fig.6. High and low DC current gain. hFE VCE = 5 V 0.1 1 Fig.7. High and low DC current gain. 1 Ths = 25 C Ths = Ths = 25 C Ths = 85 C ...

Page 4

... ICsat = 3 A Zth (K/W) ` Ths = Freq = 16 kHz 1 0.1 0.01 0.001 1E-06 1 Fig.12. Transient thermal impedance. 4 Product specification BU4506AF Normalised Power Derating with heatsink compound 100 120 Ths / C PD% = 100 25˚C BU4506DF/ 0.5 0.2 0.1 0. 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+ 140 Rev 1.000 ...

Page 5

... Fig.13. SOT199; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". July 1999 15.3 max 3.1 3.3 7.3 6.2 5.8 3 1.2 1.0 5.45 5.45 5 Product specification BU4506AF 5.2 max 3.2 seating plane 3.5 max not tinned 0.7 max 0.4 M 2.0 Rev 1.000 o 45 ...

Page 6

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. July 1999 6 Product specification BU4506AF Rev 1.000 ...

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