BU4508AZ Philips Semiconductors, BU4508AZ Datasheet
BU4508AZ
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BU4508AZ Summary of contents
Page 1
... 1. kHz f= 64 kHz kHz Csat kHz Csat PIN CONFIGURATION case CONDITIONS ˚C hs CONDITIONS With heatsink compound in free air 1 Product specification BU4508AZ TYP. MAX. UNIT - 1500 V - 800 3 ...
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... 1. 100 mA 5 CONDITIONS MHz 5 1 Csat 4 0 Csat B1 2 Product specification BU4508AZ MIN. TYP. MAX. UNIT - 2500 - 10 - MIN. TYP. MAX. UNIT - - 1 2 100 7.5 13.5 - 800 - - - - 3 ...
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... VCEOsust . CEOsust hFE ICsat 100 t IB1 10 t IB2 1 t 0.001 Fig.6. High and low DC current gain. 3 Product specification BU4508AZ ICsat IB1 - IB2 Fig.4. Switching times definitions. + 150 v nominal adjust for ICsat Lc LB T.U.T. Cfb Fig.5. Switching times test circuit . ...
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... 85˚ 16kHz C j Normalised Power Derating PD% with heatsink compound 100 120 Ths / C Fig.11. Normalised power dissipation. PD% = 100 25˚C Zth K/W 0.5 1 0.2 0.1 0.05 0. 1.0E-05 1.0E-03 1.0E- Fig.12. Transient thermal impedance. 2 140 BU4508AZ 1.0E+01 Rev 1.000 ...
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... Philips Semiconductors Silicon Diffused Power Transistor Ic(sat) ( Frequency (kHz) Fig.13. I during normal running vs. frequency of Csat operation for optimum performance May 1998 80 100 5 Product specification BU4508AZ Rev 1.000 ...
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... Fig.14. SOT186A; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". May 1998 10.3 max 3.2 3.0 2.8 seating 15.8 19 max. max. plane 3 2 2.54 0.5 5.08 6 Product specification BU4508AZ 4.6 max 2.9 max 6.4 15.8 max 0.6 2.5 1.0 (2x) 0.9 0.7 1.3 Rev 1.000 ...
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... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. May 1998 7 Product specification BU4508AZ Rev 1.000 ...