BU4508DF Philips Semiconductors, BU4508DF Datasheet

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BU4508DF

Manufacturer Part Number
BU4508DF
Description
Silicon Diffused Power Transistor
Manufacturer
Philips Semiconductors
Datasheet
Philips Semiconductors
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated
damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low
worst case dissipation.
QUICK REFERENCE DATA
PINNING - SOT199
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
THERMAL RESISTANCES
1 Turn-off current.
February 1999
Silicon Diffused Power Transistor
SYMBOL
V
V
I
I
P
V
I
V
t
SYMBOL
V
V
I
I
I
I
-I
P
T
T
SYMBOL
R
R
C
CM
Csat
f
case isolated
C
CM
B
BM
PIN
BM
stg
j
CESM
CEO
tot
CEsat
F
CESM
CEO
tot
th j-hs
th j-a
1
2
3
base
collector
emitter
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value
Total power dissipation
Storage temperature
Junction temperature
PARAMETER
Junction to heatsink
Junction to ambient
DESCRIPTION
PIN CONFIGURATION
1
case
1
CONDITIONS
V
T
I
f = 16kHz
I
I
CONDITIONS
V
T
CONDITIONS
with heatsink compound
in free air
C
F
Csat
hs
hs
1
BE
BE
= 5 A
= 5.0 A; I
2
= 0 V
= 0 V
= 5A; f = 16kHz
25 ˚C
3
25 ˚C
B
= 1.25 A
SYMBOL
b
TYP.
TYP.
MIN.
1.85
Product specification
300
-65
5.0
35
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Rbe
BU4508DF
MAX.
MAX.
MAX.
1500
1500
e
c
800
400
800
150
150
3.0
2.2
2.8
15
45
15
45
8
8
4
6
5
-
-
Rev 1.000
UNIT
UNIT
UNIT
K/W
K/W
ns
˚C
˚C
W
W
V
V
A
A
V
A
V
V
V
A
A
A
A
A

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BU4508DF Summary of contents

Page 1

... 16kHz 5A 16kHz Csat PIN CONFIGURATION case CONDITIONS ˚C hs CONDITIONS with heatsink compound in free air 1 Product specification BU4508DF TYP. MAX. UNIT - 1500 V - 800 3 1.85 2.2 V 300 400 ns SYMBOL ...

Page 2

... 500 mA 5 CONDITIONS 1.0 A;(I Csat / Product specification BU4508DF MIN. TYP. MAX. UNIT - - 2500 - 22 - MIN. TYP. MAX. UNIT - - 1 2.0 mA 7.5 13 800 - - - - 3.0 0.85 0.94 1 ...

Page 3

... ICsat Lc D.U.T. LB Cfb Rbe Fig.4. Switching times test circuit . hFE BU4508DF/X/Z Ths = 25 C VCE = 1V Ths = 85 C 0.1 1 Fig.5. High and low DC current gain. BU4508DF/X/Z hFE Ths = 25 C VCE = 5V Ths = 85 C 0.1 1 Fig.6. High and low DC current gain Rev 1.000 ...

Page 4

... BU4508DF/X/Z 10 Ths = 25 C Ths = 85 C 0.1 0.01 0.001 1.0E- BU4508D ts/tf ICsat = 5 A Ths = 85 C Freq = 16 kHz 2 2 Product specification BU4508DF Normalised Power Derating PD% with heatsink compound 100 120 Ths / C Fig.10. Normalised power dissipation. PD% = 100 25˚C Zth K/W 0.5 1 0.2 0.1 ...

Page 5

... Fig.12. SOT199; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". February 1999 15.3 max 3.1 3.3 7.3 6.2 5.8 3 1.2 1.0 5.45 5.45 5 Product specification BU4508DF 5.2 max 3.2 seating plane 3.5 max not tinned 0.7 max 0.4 M 2.0 Rev 1.000 o 45 ...

Page 6

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. February 1999 6 Product specification BU4508DF Rev 1.000 ...

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