BU4522AF Philips Semiconductors, BU4522AF Datasheet

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BU4522AF

Manufacturer Part Number
BU4522AF
Description
Silicon Diffused Power Transistor
Manufacturer
Philips Semiconductors
Datasheet

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BU4522AF
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Philips Semiconductors
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in
horizontal deflection circuits of colour TV receivers and PC monitors.
QUICK REFERENCE DATA
PINNING - SOT199
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
THERMAL RESISTANCES
1 Turn-off current.
December 1997
Silicon Diffused Power Transistor
SYMBOL
V
V
I
I
P
V
I
t
SYMBOL
V
V
I
I
I
I
-I
P
T
T
SYMBOL
R
R
C
CM
Csat
f
case isolated
C
CM
B
BM
PIN
BM
stg
j
CESM
CEO
tot
CEsat
CESM
CEO
tot
th j-hs
th j-a
1
2
3
base
collector
emitter
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current (Fig 17)
Fall time
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value
Total power dissipation
Storage temperature
Junction temperature
PARAMETER
Junction to heatsink
Junction to ambient
DESCRIPTION
PIN CONFIGURATION
1
case
1
CONDITIONS
V
T
I
f = 16 kHz
f = 64 kHz
I
I
CONDITIONS
V
T
CONDITIONS
with heatsink compound
in free air
C
Csat
Csat
hs
hs
1
BE
BE
= 7 A; I
2
= 0 V
= 0 V
= 7 A; f = 16 kHz
= 6 A; f = 64 kHz
25 ˚C
3
25 ˚C
B
= 1.75 A
SYMBOL
b
TYP.
TYP.
MIN.
Product specification
285
170
-55
35
7
6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BU4522AF
MAX.
MAX.
MAX.
1500
e
1500
c
800
400
230
800
150
150
3.0
2.8
10
25
45
10
25
45
6
9
6
-
-
-
Rev 1.000
UNIT
UNIT
UNIT
K/W
K/W
ns
ns
˚C
˚C
W
W
V
V
A
A
V
A
A
V
V
A
A
A
A
A

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BU4522AF Summary of contents

Page 1

... kHz kHz kHz Csat kHz Csat PIN CONFIGURATION case CONDITIONS ˚C hs CONDITIONS with heatsink compound in free air 1 Product specification BU4522AF TYP. MAX. UNIT - 1500 V - 800 3 ...

Page 2

... 1. 1. CONDITIONS kHz Csat ( kHz Csat ( Product specification BU4522AF MIN. TYP. MAX 2500 - 22 - MIN. TYP. MAX 1 2 1.0 7.5 13.5 - 800 - - - - 3.0 0.85 0.94 1 ...

Page 3

... Fig.4. Switching times waveforms (64 kHz). CEOsust min VCEOsust . CEOsust ICsat t IB1 t IB2 IBend -VBB t 3 Product specification BU4522AF ICsat TRANSISTOR DIODE IB1 IB2 ICsat IB1 - IB2 Fig.5. Switching times definitions. + 150 v nominal adjust for ICsat ...

Page 4

... Fig.12. Typical collector storage and fall time. 4 Product specification BU4522AF VBEsat \ V Ths = 25 C Ths = BU4522AF/X 16kHz ICsat = 7 A Ths = 85 C Freq = 16 kHz 0 85˚ 16kHz C j BU4522AF/X 64kHz ICsat = 6 A Ths = 85 C Freq = 64 kHz ...

Page 5

... 1.0E-01 1.0E-01 Fig.17. I VCL CFB 5 Product specification BU4522AF BU2522AF 500 1000 VCE / V Ic(sat) ( Horizontal frequency (kHz) during normal running vs. frequency of Csat operation for optimum performance 1500 ...

Page 6

... Fig.18. SOT199; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". December 1997 15.3 max 3.1 3.3 7.3 6.2 5.8 3 1.2 1.0 5.45 5.45 6 Product specification BU4522AF 5.2 max 3.2 seating plane 3.5 max not tinned 0.7 max 0.4 M 2.0 Rev 1.000 o 45 ...

Page 7

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. December 1997 7 Product specification BU4522AF Rev 1.000 ...

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