BU4522DF Philips Semiconductors, BU4522DF Datasheet
BU4522DF
Manufacturer Part Number
BU4522DF
Description
Silicon Diffused Power Transistor
Manufacturer
Philips Semiconductors
Datasheet
1.BU4522DF.pdf
(4 pages)
Philips Semiconductors
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated
damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
receivers and p.c monitors. Features exceptional tolerance to base drive and collector current load variations
resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
PINNING - SOT199
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
1 Turn-off current.
July 1998
Silicon Diffused Power Transistor
SYMBOL
V
V
I
I
P
V
I
V
t
SYMBOL
V
V
I
I
I
I
-I
P
T
T
C
CM
Csat
f
case isolated
C
CM
B
BM
PIN
BM
stg
j
CESM
CEO
tot
CEsat
F
CESM
CEO
tot
1
2
3
base
collector
emitter
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current (Fig 17)
Diode forward voltage
Fall time
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value
Total power dissipation
Storage temperature
Junction temperature
DESCRIPTION
PIN CONFIGURATION
1
case
1
CONDITIONS
V
T
I
f = 16 kHz
f = 64 kHz
I
I
f = 64 kHz
CONDITIONS
V
T
C
F
Csat
hs
hs
1
BE
BE
= 7.0 A
= 7 A; I
2
= 0 V
= 0 V
= 7 A; f = 16 kHz
25 ˚C
3
25 ˚C
B
= 1.75 A
SYMBOL
b
Objective specification
TYP.
MIN.
285
t.b.f
-55
7
6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Rbe
BU4522DF
MAX.
MAX.
1500
1500
e
c
800
400
t.b.f
800
150
150
3.0
2.2
10
25
45
10
25
45
6
9
6
-
-
Rev 1.000
UNIT
UNIT
ns
ns
˚C
˚C
W
W
V
V
A
A
V
A
A
V
V
V
A
A
A
A
A
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