BU4523AW Philips Semiconductors, BU4523AW Datasheet

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BU4523AW

Manufacturer Part Number
BU4523AW
Description
Silicon Diffused Power Transistor
Manufacturer
Philips Semiconductors
Datasheet
Philips Semiconductors
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope
intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional
tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
PINNING - SOT429
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
THERMAL RESISTANCES
1 Turn-off current.
May 1998
Silicon Diffused Power Transistor
SYMBOL
V
V
I
I
P
V
I
t
SYMBOL
V
V
I
I
I
I
-I
P
T
T
SYMBOL
R
R
C
CM
Csat
f
C
CM
B
BM
PIN
BM
stg
j
CESM
CEO
tot
CEsat
tab
CESM
CEO
tot
th j-mb
th j-a
1
2
3
base
collector
emitter
collector
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current.
Fall time
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value
Total power dissipation
Storage temperature
Junction temperature
PARAMETER
Junction to mounting base
Junction to ambient
DESCRIPTION
PIN CONFIGURATION
1
1
CONDITIONS
V
T
I
f = 16 kHz
f = 70 kHz
I
I
CONDITIONS
V
T
CONDITIONS
in free air
C
Csat
Csat
2
hs
hs
1
BE
BE
= 8 A; I
3
= 0 V
= 0 V
= 8 A; f = 16 kHz
= 6.5 A; f = 70 kHz
25 ˚C
25 ˚C
B
= 2 A
SYMBOL
b
TYP.
TYP.
MIN.
0.14
Product specification
-55
6.5
0.3
45
8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BU4523AW
MAX.
MAX.
MAX.
1500
e
1500
c
800
125
800
125
150
150
3.0
0.4
11
29
11
29
10
7
7
1
-
-
-
-
Rev 1.000
UNIT
UNIT
UNIT
K/W
K/W
˚C
˚C
W
W
V
V
A
A
V
A
A
V
V
A
A
A
A
A
s
s

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BU4523AW Summary of contents

Page 1

... kHz kHz kHz Csat kHz Csat PIN CONFIGURATION CONDITIONS ˚C hs CONDITIONS in free air 1 Product specification BU4523AW TYP. MAX. UNIT - 1500 V - 800 125 0.3 0.4 s ...

Page 2

... CONDITIONS I = 8.0 A;I = 1.6 A Csat -4 6.5 A;I = 1.3 A Csat -3 50v 100-200R 250 Horizontal 200 Oscilloscope 100 Vertical Fig.2. Oscilloscope display for V CEOsust 2 Product specification BU4523AW MIN. TYP. MAX. UNIT - - 1 2 100 7.5 12.5 - 800 - - - - 3.0 0.85 0.95 1 4.2 5.8 7.3 TYP. MAX. UNIT 4 ...

Page 3

... IB2 1 0.01 t ICsat 100 0.01 - IB2 3 Product specification BU4523AW + 150 v nominal adjust for ICsat Lc LB T.U.T. Cfb Fig.6. Switching times test circuit . BU4523AF/X hFE VCE = 1 V Ths = 25 C Ths = Fig.7. High and low DC current gain. hFE ...

Page 4

... Product specification BU4523AW Normalised Power Derating PD% with heatsink compound 100 120 Ths / C Fig.12. Normalised power dissipation. PD% = 100 25˚C Zth K/W BU4523AW 1 0.5 0.2 0.1 0.05 0. 1E-07 1E-05 1E-03 1E- Fig.13. Transient thermal impedance. VCC LC LB T.U.T. Fig.14. Test Circuit RBSOA. ...

Page 5

... Fig.15. Reverse bias safe operating area. T May 1998 Ic(sat) (A) BU2523 1000 1500 Fig.16 jmax Csat operation for optimum performance 5 Product specification BU4523AW 100 Horizontal frequency (kHz) during normal running vs. frequency of Rev 1.000 ...

Page 6

... Net Mass 3.5 21 max 4.0 max 15.5 min 2.2 max 3.2 max Notes 1. Refer to mounting instructions for SOT429 envelope. 2. Epoxy meets UL94 V0 at 1/8". May 1998 16 max 1.8 5.3 7.3 seating 15.5 max plane 2 1.1 0.4 M 5.45 5.45 Fig.17. SOT429; pin 2 connected to mounting base. 6 Product specification BU4523AW 5.3 max o 3.5 max 0.9 max Rev 1.000 ...

Page 7

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. May 1998 7 Product specification BU4523AW Rev 1.000 ...

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