BU4525AL Philips Semiconductors, BU4525AL Datasheet

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BU4525AL

Manufacturer Part Number
BU4525AL
Description
Silicon Diffused Power Transistor
Manufacturer
Philips Semiconductors
Datasheet
Philips Semiconductors
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope intended for use in horizontal deflection circuits of colour television receivers an p.c monitors. Features
exceptional tolerance to base drive and collector current load variations resulting in a very low worst case
dissipation.
QUICK REFERENCE DATA
PINNING - SOT430
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
1 Turn-off current.
January 1998
Silicon Diffused Power Transistor
SYMBOL
V
V
I
I
P
V
I
t
SYMBOL
V
V
I
I
I
I
-I
P
T
T
C
CM
Csat
f
C
CM
B
BM
heat collector
sink
PIN
BM
stg
j
CESM
CEO
tot
CEsat
CESM
CEO
tot
1
2
3
base
collector
emitter
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value
Total power dissipation
Storage temperature
Junction temperature
DESCRIPTION
PIN CONFIGURATION
1
1
CONDITIONS
V
T
I
f= 16 kHz
f= 70 kHz
I
I
CONDITIONS
V
T
C
Csat
Csat
2
mb
mb
1
BE
BE
= 9.0 A; I
3
= 0 V
= 0 V
= 9.0 A; f = 16 kHz
= 7.5 A; f = 70 kHz
25 ˚C
25 ˚C
B
= 2.25A
SYMBOL
b
Objective specification
TYP.
MIN.
t.b.f
t.b.f
-55
8.0
7.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BU4525AL
MAX.
MAX.
1500
e
1500
c
800
125
t.b.f
t.b.f
800
125
150
150
3.0
12
30
12
30
12
8
7
-
-
Rev 1.000
UNIT
UNIT
˚C
˚C
W
W
V
V
A
A
V
A
A
V
V
A
A
A
A
A
s
s

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BU4525AL Summary of contents

Page 1

... ˚ 9 2.25A kHz f= 70 kHz kHz Csat kHz Csat PIN CONFIGURATION CONDITIONS ˚ Objective specification BU4525AL TYP. MAX. UNIT - 1500 V - 800 125 W - 3 t.b.f t.b.f s t.b.f t ...

Page 2

... 9.0 A 9.0 A CONDITIONS MHz 9.0 A;I = 1.8 A; Csat -4 7.5 A;I = 1.5 A Csat -4 Objective specification BU4525AL TYP. MAX. UNIT - 1.0 K K/W MIN. TYP. MAX. UNIT - - 1 2 1.0 mA 7.5 13.5 - 800 - - - - 3.0 t.b.f - 1.1 - t.b.f - 4.2 5.35 6.5 TYP ...

Page 3

... Philips Semiconductors Silicon Diffused Power Transistor MECHANICAL DATA Dimensions in mm Net Mass 20.5 - 20.7 January 1998 19.9 3.5 3.7 26.0 2.4 5.46 5.46 Fig.1. SOT430; pin 2 connected to mounting base. 3 Objective specification BU4525AL 6.2 4.1 8.5 1.9 seating plane 2.4 3.0 1.3 5.0 3.0 0.8 2.7 Rev 1.000 ...

Page 4

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. January 1998 4 Objective specification BU4525AL Rev 1.000 ...

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