BU4525DW Philips Semiconductors, BU4525DW Datasheet

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BU4525DW

Manufacturer Part Number
BU4525DW
Description
Silicon Diffused Power Transistor
Manufacturer
Philips Semiconductors
Datasheet
1.BU4525DW.pdf (4 pages)

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
BU4525DW
Manufacturer:
NEC
Quantity:
6 000
Philips Semiconductors
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope
with an integrated damper diode intended for use in horizontal deflection circuits of colour television receivers and
p.c monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very
low worst case dissipation.
QUICK REFERENCE DATA
PINNING - SOT429
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
1 Turn-off current.
July 1998
Silicon Diffused Power Transistor
SYMBOL
V
V
I
I
P
V
I
V
t
SYMBOL
V
V
I
I
I
I
-I
P
T
T
C
CM
Csat
f
C
CM
B
BM
PIN
BM
stg
j
CESM
CEO
tot
CEsat
F
tab
CESM
CEO
tot
1
2
3
base
collector
emitter
collector
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value
Total power dissipation
Storage temperature
Junction temperature
DESCRIPTION
PIN CONFIGURATION
1
1
CONDITIONS
V
T
I
f = 16 kHz
f = 70 kHz
I
I
f = 70 kHz
CONDITIONS
V
T
C
F
Csat
2
hs
hs
1
BE
BE
= 9.0 A
= 9.0 A; I
3
= 0 V
= 0 V
= 9.0 A;f = 16 kHz
25 ˚C
25 ˚C
B
= 2.25 A
SYMBOL
b
Objective specification
TYP.
MIN.
t.b.f
t.b.f
-55
9.0
0.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Rbe
BU4525DW
MAX.
MAX.
1500
1500
e
c
0.55
800
125
t.b.f
800
125
150
150
3.0
2.2
14
30
14
30
12
8
7
-
-
Rev 1.000
UNIT
UNIT
˚C
˚C
W
W
V
V
A
A
V
A
A
V
V
V
A
A
A
A
A
s
s

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BU4525DW Summary of contents

Page 1

... July 1998 CONDITIONS ˚ 9 2. kHz kHz 9.0 A kHz Csat kHz PIN CONFIGURATION CONDITIONS ˚ Objective specification BU4525DW TYP. MAX. UNIT - 1500 V - 800 125 W - 3 t.b 2.2 V 0.4 0.55 s t.b.f t.b.f ...

Page 2

... 9.0 A;I = 2.25A 9.0 A;I = 2.25A 1 9 CONDITIONS MHz 9.0 A;I = 1.8 A Csat -4 t.b.f Csat 2 Objective specification BU4525DW TYP. MAX. UNIT - 1 K K/W MIN. TYP. MAX. UNIT - - 1 2.0 mA 7.5 13 800 - - - - 3.0 0.96 1.01 1.06 - t.b.f - 4.2 5.8 7 ...

Page 3

... Net Mass 3.5 21 max 4.0 max 15.5 min 2.2 max 3.2 max Notes 1. Refer to mounting instructions for SOT429 envelope. 2. Epoxy meets UL94 V0 at 1/8". July 1998 16 max 1.8 5.3 7.3 seating 15.5 max plane 2 1.1 0.4 M 5.45 5.45 Fig.1. SOT429; pin 2 connected to mounting base. 3 Objective specification BU4525DW 5.3 max o 3.5 max 0.9 max Rev 1.000 ...

Page 4

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. July 1998 4 Objective specification BU4525DW Rev 1.000 ...

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