NSS20101J ON Semiconductor, NSS20101J Datasheet
NSS20101J
Manufacturer Part Number
NSS20101J
Description
20 V 1.0 A / Low VCE(sat) NPN Transistor
Manufacturer
ON Semiconductor
Datasheet
1.NSS20101J.pdf
(5 pages)
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NSS20101JT1G
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NSS20101J
20 V, 1.0 A, Low V
NPN Transistor
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ 100 mm
2. FR−4 @ 500 mm
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2008
September, 2008 − Rev. 0
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current − Continuous
Collector Current − Peak
Electrostatic Discharge
Total Device Dissipation
Thermal Resistance,
Total Device Dissipation
Thermal Resistance,
Junction and Storage
ON Semiconductor’s e
Typical applications are DC−DC converters and power management
This is a Pb−Free Device
T
Derate above 25°C
Junction−to−Ambient
T
Derate above 25°C
Junction−to−Ambient
Temperature Range
A
A
= 25°C
= 25°C
Characteristic
Rating
2
2
, 1 oz. copper traces.
, 1 oz. copper traces.
CE(sat)
(T
A
= 25°C)
) and high current gain capability. These
2
PowerEdge family of low V
R
R
P
P
qJA
qJA
D
D
Symbol
Symbol
T
V
V
V
(Note 1)
(Note 2)
ESD
J
I
(Note 1)
(Note 2)
CEO
CBO
EBO
, T
CM
I
C
stg
2
PowerEdge devices to be
CE(sat)
−55 to
+150
Max
HBM Class 3B
Max
255
490
300
415
6.0
1.0
2.0
2.0
2.4
20
40
MM Class C
1
mW/°C
mW/°C
°C/W
°C/W
Unit
Unit
Vdc
Vdc
Vdc
mW
mW
CE(sat)
°C
A
A
†For information on tape and reel specifications,
NSS20101JT1G
NPN LOW V
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
*Date Code orientation may vary depending
upon manufacturing location.
(Note: Microdot may be in either location)
Device
CASE 463C
20 VOLTS, 1.0 AMPS
ORDERING INFORMATION
3
SC−89
xx
M
G
http://onsemi.com
BASE
1
= Specific Device Code
= Date Code*
= Pb−Free Package
1
2
CE(sat)
(Pb−Free)
Package
SC−89
COLLECTOR
MARKING DIAGRAM
& PIN ASSIGNMENT
EMITTER
Publication Order Number:
3
TRANSISTOR
2
Base
1
Collector
xx M G
3000/Tape & Reel
3
G
Shipping
Emitter
NSS20101J/D
2
†
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NSS20101J Summary of contents
Page 1
... ORDERING INFORMATION Device Package Shipping NSS20101JT1G SC−89 3000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NSS20101J/D † ...
Page 2
ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage ( mAdc Collector −Base Breakdown Voltage (I = 0.1 mAdc Emitter −Base Breakdown Voltage (I = 0.1 mAdc, I ...
Page 3
I , COLLECTOR CURRENT (A) C Figure 3. DC Current Gain 0.1 0.01 0.001 0.001 0. COLLECTOR CURRENT (A) ...
Page 4
0.01 0.0001 0.001 I , BASE CURRENT (A) B Figure 9. Saturation Region COLLECTOR−BASE VOLTAGE ...
Page 5
... ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative INCHES NOM MAX 0.063 0.067 0.034 0.040 0.028 0.031 0.011 0.013 0.006 0.008 0.016 0.020 _ −−− −−− 10 0.063 0.067 NSS20101J/D ...