BU808DFH STMicroelectronics, BU808DFH Datasheet
BU808DFH
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BU808DFH Summary of contents
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... COMPLIANT) FOR EASY MOUNTING CREEPAGE PATH > APPLICATIONS COST EFFECTIVE SOLUTION FOR HORIZONTAL DEFLECTION IN LOW END INCHES. DESCRIPTION The BU808DFH is a NPN transistor in monolithic Darlington configuration manufactured using Multiepitaxial Mesa technology for cost-effective high performance. ABSOLUTE MAXIMUM RATINGS Symbol V ...
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... BU808DFH THERMAL DATA R Thermal Resistance Junction-case thj-case ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CES Current (V I Emitter Cut-off Current EBO ( www.DataSheet4U.com V Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter BE(sat) Saturation Voltage h DC Current Gain FE INDUCTIVE LOAD t Storage Time s t Fall Time f INDUCTIVE LOAD ...
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... Derating Curve www.DataSheet4U.com Collector Emitter Saturation Voltage Power Losses at 16 KHz DC Current Gain Base Emitter Saturation Voltage Switching Time Inductive Load at 16KHz BU808DFH 3/7 ...
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... BU808DFH Switching Time Inductive Load at 16KHZ www.DataSheet4U.com BASE DRIVE INFORMATION In order to saturate the power switch and reduce conduction losses, adequate direct base current I has to be provided for the lowest gain 100 C (line scan phase). On the other hand, negative base current I turn off the power transistor (retrace phase) ...
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... Figure 1: Inductive Load Switching Test Circuits. www.DataSheet4U.com Figure 2: Switching Waveforms in a Deflection Circuit BU808DFH 5/7 ...
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... BU808DFH TO-220FH (Fully plastic High voltage) MECHANICAL DATA DIM www.DataSheet4U.com 6/7 mm MIN. TYP. MAX. 4.4 4.6 2.5 2.7 2.5 2.75 0.45 0.7 0.75 1 1.3 1.8 1.3 1.8 4.95 5.2 2.4 2.7 10 10.4 16 28.6 30.6 9.8 10.6 3.4 15.9 16.4 9 9.3 14.5 15 2.4 inch MIN. TYP. MAX. 0.173 0.181 0.098 0.106 0.098 0.108 0.017 0.027 0.030 0.039 0.051 0.070 0.051 ...
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