BU808DFH STMicroelectronics, BU808DFH Datasheet

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BU808DFH

Manufacturer Part Number
BU808DFH
Description
HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON TRANSISTOR
Manufacturer
STMicroelectronics
Datasheet

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Part Number:
BU808DFH
Manufacturer:
ST
0
www.DataSheet4U.com
APPLICATIONS
DESCRIPTION
The BU808DFH is a NPN transistor in monolithic
Darlington configuration. It is manufactured using
Multiepitaxial Mesa technology for cost-effective
high performance.
ABSOLUTE MAXIMUM RATINGS
April 2002
Symbol
NEW Fully Plastic TO-220 for HIGH
VOLTAGE APPLICATIONS
NPN MONOLITHIC DARLINGTON WITH
INTEGRATED FREE-WHEELING DIODE
HIGH VOLTAGE CAPABILITY ( > 1400 V )
HIGH DC CURRENT GAIN ( TYP. 150 )
LOW BASE-DRIVE REQUIREMENTS
DEDICATED APPLICATION NOTE AN1184
FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
CREEPAGE PATH > 4 mm
COST EFFECTIVE SOLUTION FOR
HORIZONTAL DEFLECTION IN LOW END
TV UP TO 21 INCHES.
V
V
V
V
P
T
I
I
CBO
CEO
EBO
I
CM
I
BM
T
isol
stg
C
B
tot
j
Collector-Base Voltage (I
Collector-Emitter Voltage (I
Emitter-Base Voltage (I
Collector Current
Collector Peak Current (t
Base Current
Base Peak Current (t
Total Dissipation at T
Insulation Withstand Voltage (RMS) from All
Three Leads to Exernal Heatsink
Storage Temperature
Max. Operating Junction Temperature
®
NPN POWER DARLINGTON TRANSISTOR
Parameter
p
c
< 5 ms)
= 25
C
p
E
= 0)
< 5 ms)
= 0)
B
o
C
= 0)
HIGH VOLTAGE FAST-SWITCHING
INTERNAL SCHEMATIC DIAGRAM
-65 to 150
Value
(see page 6)
TO-220FH
1400
2500
700
150
10
42
5
8
3
6
BU808DFH
Unit
o
o
W
V
V
V
A
A
A
A
V
C
C
1/7

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BU808DFH Summary of contents

Page 1

... COMPLIANT) FOR EASY MOUNTING CREEPAGE PATH > APPLICATIONS COST EFFECTIVE SOLUTION FOR HORIZONTAL DEFLECTION IN LOW END INCHES. DESCRIPTION The BU808DFH is a NPN transistor in monolithic Darlington configuration manufactured using Multiepitaxial Mesa technology for cost-effective high performance. ABSOLUTE MAXIMUM RATINGS Symbol V ...

Page 2

... BU808DFH THERMAL DATA R Thermal Resistance Junction-case thj-case ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CES Current (V I Emitter Cut-off Current EBO ( www.DataSheet4U.com V Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter BE(sat) Saturation Voltage h DC Current Gain FE INDUCTIVE LOAD t Storage Time s t Fall Time f INDUCTIVE LOAD ...

Page 3

... Derating Curve www.DataSheet4U.com Collector Emitter Saturation Voltage Power Losses at 16 KHz DC Current Gain Base Emitter Saturation Voltage Switching Time Inductive Load at 16KHz BU808DFH 3/7 ...

Page 4

... BU808DFH Switching Time Inductive Load at 16KHZ www.DataSheet4U.com BASE DRIVE INFORMATION In order to saturate the power switch and reduce conduction losses, adequate direct base current I has to be provided for the lowest gain 100 C (line scan phase). On the other hand, negative base current I turn off the power transistor (retrace phase) ...

Page 5

... Figure 1: Inductive Load Switching Test Circuits. www.DataSheet4U.com Figure 2: Switching Waveforms in a Deflection Circuit BU808DFH 5/7 ...

Page 6

... BU808DFH TO-220FH (Fully plastic High voltage) MECHANICAL DATA DIM www.DataSheet4U.com 6/7 mm MIN. TYP. MAX. 4.4 4.6 2.5 2.7 2.5 2.75 0.45 0.7 0.75 1 1.3 1.8 1.3 1.8 4.95 5.2 2.4 2.7 10 10.4 16 28.6 30.6 9.8 10.6 3.4 15.9 16.4 9 9.3 14.5 15 2.4 inch MIN. TYP. MAX. 0.173 0.181 0.098 0.106 0.098 0.108 0.017 0.027 0.030 0.039 0.051 0.070 0.051 ...

Page 7

... Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - The ST logo is a trademark of STMicroelectronics © 2002 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com BU808DFH 7/7 ...

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