BU323AP ON Semiconductor, BU323AP Datasheet
BU323AP
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BU323AP Summary of contents
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... MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. Collector–Emitter Sustaining Voltage — V CER(sus) = 475 Vdc 125 Watts Capability at 50 Volts V CE Sat Specified at – 2.0 V Max 6.0 A Photoglass Passivation for Reliability and Stability Î ...
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... BU323AP Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î ELECTRICAL CHARACTERISTICS Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î ...
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... Figure 6. Base–Emitter Voltage REVERSE 10 – – 0.2 Figure 8. Collector Cutoff Region BU323AP 0.02 0.05 0.1 0.2 0 BASE CURRENT (AMP – 0.5 1.0 2.0 5 COLLECTOR CURRENT ( 250 Vdc 150 CES ...
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... DERATING 0 Vdc 50 ms 470 350 V (BU323P 400 V (BU323AP 160 200 selected such that I C reaches 10 Adc before switch–off. NOTE: Figure 12 specifies energy handling capabilities in an automotive ignition circuit. Figure 12. Ignition Test Circuit Motorola Bipolar Power Transistor Device Data ...
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... G Motorola Bipolar Power Transistor Device Data PACKAGE DIMENSIONS C NOTES CASE 340D–02 TO–218 TYPE ISSUE B BU323AP 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS INCHES DIM MIN MAX MIN MAX A ––– 20.35 ––– ...
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... JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–81–3521–8315 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 *BU323AP/D* Motorola Bipolar Power Transistor Device Data BU323AP/D ...