BU323AP ON Semiconductor, BU323AP Datasheet - Page 4

• Manufacturer Part Number: BU323AP
• Description: DARLINGTON NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS
• Manufacturer: ON Semiconductor

BU323AP
3–4
0.005
0.01
100
0.2
0.1
50
20
10
80
60
40
20
5
2
1
0
0.07
0.05
0.03
0.02
0.01
5
0
0.7
0.5
0.3
0.2
0.1
Figure 10. Forward Bias Safe Operating Area
1
0.01
0.05
10
V CE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
D = 0.5
SINGLE PULSE
0.02
40
0.1
0.2
THERMAL LIMIT (SINGLE PULSE)
BONDING WIRE LIMIT
SECOND BREAKDOWN LIMIT
T C = 25 C
Figure 11. Power Derating
T C , CASE TEMPERATURE ( C)
DERATING
THERMAL
20
0.05
0.01
30
80
0.02
0.1
50
70
5.0 ms
120
SECOND BREAKDOWN
0.2
100
dc
0.5
200 300
160
DERATING
1.0 ms
100 s
Figure 9. Thermal Response
1
500
200
2
t, TIME (ms)
V Z =
V Z = 350 V (BU323P)
at I Z = 20 mA
transistor average junction temperature and second break-
down. Safe operating area curves indicate I C – V CE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when T C
ate the same as thermal limitations. Allowable current at the
voltages shown on Figure 10 may be found at any case tem-
perature by using the appropriate curve on Figure 11.
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations im-
posed by second breakdown.
0 Vdc
t 1 to be selected such that I C reaches 10 Adc before switch–off.
NOTE: Figure 12 specifies energy handling capabilities in an automotive ignition circuit.
R JC (t) = r(t) R JC
R JC = C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t 1
T J(pk) – T C = P (pk) R JC (t)
400 V (BU323AP)
5
There are two limitations on the power handling ability of a
The data of Figure 10 is based on T C = 25 _ C, T J(pk) is
T J(pk) may be calculated from the data in Figure 11. At high
V CC = 16 Vdc
50 ms
t 1
10
Motorola Bipolar Power Transistor Device Data
470
25 _ C. Second breakdown limitations do not der-
20
Figure 12. Ignition Test Circuit
BC337
47
1N4001
50
100
<1
100
INDUCTIVE LOAD
1N4001
P (pk)
DUTY CYCLE, D = t 1 /t 2
V Z
200
t 1
B
11 mH
t 2
1K
500
30
TUT
C
E
1000
0.22
F
2000
2.2