UNR111x Panasonic Semiconductor, UNR111x Datasheet

no-image

UNR111x

Manufacturer Part Number
UNR111x
Description
Silicon PNP epitaxial planer transistor
Manufacturer
Panasonic Semiconductor
Datasheet
www.DataSheet4U.com
Transistors with built-in Resistor
UNR111x Series
Silicon PNP epitaxial planar transistor
For digital circuits
■ Features
■ Resistance by Part Number
■ Absolute Maximum Ratings T
Publication date: October 2003
• Costs can be reduced through downsizing of the equipment and
• M type package allowing easy automatic and manual insertion as
• UNR1110 (UN1110)
• UNR1111 (UN1111)
• UNR1112 (UN1112)
• UNR1113 (UN1113)
• UNR1114 (UN1114)
• UNR1115 (UN1115)
• UNR1116 (UN1116)
• UNR1117 (UN1117)
• UNR1118 (UN1118)
• UNR1119 (UN1119)
• UNR111D (UN111D)
• UNR111E (UN111E)
• UNR111F (UN111F)
• UNR111H (UN111H)
• UNR111L (UN111L)
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
reduction of the number of parts
well as stand-alone fixing to the printed circuit board.
Parameter
0.51 kΩ
4.7 kΩ
4.7 kΩ
2.2 kΩ
4.7 kΩ
47 kΩ
10 kΩ
22 kΩ
47 kΩ
10 kΩ
10 kΩ
22 kΩ
47 kΩ
47 kΩ
1 kΩ
Symbol
(R
V
V
T
1
P
I
T
a
CBO
CEO
)
C
stg
T
j
= 25°C
−55 to +150
Rating
−100
−50
−50
400
150
Note) The part numbers in the parenthesis show conventional part number.
(UN111x Series)
5.1 kΩ
4.7 kΩ
10 kΩ
22 kΩ
47 kΩ
47 kΩ
10 kΩ
10 kΩ
22 kΩ
10 kΩ
10 kΩ
SJH00001BED
(R
2
)
Unit
mW
mA
°C
°C
V
V
Internal Connection
R 0.7
(1.5)
3
(2.5)
(0.85)
0.55
B
6.9
(1.5)
±0.1
±0.1
R 0.9
2
(2.5)
R
R
1
2
1
2.5
M-A1 Package
C
E
±0.1
1: Base
2: Collector
3: Emitter
0.45
Unit: mm
(1.0)
±0.05
1

Related parts for UNR111x

UNR111x Summary of contents

Page 1

... Transistors with built-in Resistor UNR111x Series Silicon PNP epitaxial planar transistor For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. ...

Page 2

... UNR111x Series ■ Electrical Characteristics T Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base UNR1111 cutoff current UNR1112/1114/111D/111E (Collector open) UNR1113 UNR1110/1115/1116/1117 UNR111F/111H UNR1119 UNR1118/111L Forward current UNR1111 transfer ratio ...

Page 3

... V ) Collector current I  −10 4 −10 3 −10 2 −10 −1 −100 − 0.4 − 0.6 − 0.8 −1.0 (V) Input voltage V SJH00001BED UNR111x Series 400 = 300 200 = 75°C 100 0 −1 −10 −100 ( mA ) Collector current −100 = − 25° ...

Page 4

... UNR111x Series Characteristics charts of UNR1111  −160 = 25° −1 − 0.9 mA −120 − 0.8 mA − 0.7 mA − 0.6 mA −80 − 0.5 mA − 0.4 mA − 0.3 mA −40 − 0.2 mA − 0 −2 −4 −6 −8 −10 0 Collector-emitter voltage V CE  MHz = 25°C ...

Page 5

... V ) Collector current I  −10 4 −10 3 −10 2 −10 −1 −100 − 0.4 − 0.6 − 0.8 −1.0 (V) Input voltage V SJH00001BED UNR111x Series V IN −100 = − 25°C a −10 −1 − 0.1 − 0.01 −1.2 −1.4 − 0.1 − Output current 400 ...

Page 6

... UNR111x Series Characteristics charts of UNR1114  −160 = 25° −1 − 0.9 mA − 0.8 mA −120 − 0.7 mA − 0.6 mA − 0.5 mA −80 − 0.4 mA − 0.3 mA − 0.2 mA −40 − 0 −2 −4 −6 −8 −10 0 Collector-emitter voltage V CE  MHz = 25°C ...

Page 7

... V ) Collector current I  −10 4 −10 3 −10 2 −10 −1 −100 − 0.4 − 0.6 − 0.8 −1.0 (V) Input voltage V IN SJH00001BED UNR111x Series V IN −100 = − 25˚ −10 −1 − 0.1 − 0.01 − 0.1 −1 −1.2 −1 Output current ...

Page 8

... UNR111x Series Characteristics charts of UNR1117  −120 = 25° −1.0 mA −100 I B − 0.9 mA − 0.8 mA − 0.7 mA −80 − 0.6 mA − 0.5 mA − 0.4 mA −60 − 0.3 mA −40 − 0.2 mA −20 − 0 −2 −4 −6 −8 −10 0 Collector-emitter voltage V CE  MHz ...

Page 9

... V ) Collector current I  −10 4 −10 3 −10 2 −10 −1 −100 − 0.4 − 0.6 − 0.8 −1.0 Input voltage V (V) IN SJH00001BED UNR111x Series V IN −100 = − 25° −10 −1 − 0.1 − 0.01 −1.2 −1.4 − 0.1 − Output current ...

Page 10

... UNR111x Series Characteristics charts of UNR111D  −60 = − 1 25˚ − 0.9 mA − 0.8 mA −50 −40 − 0.3 mA −30 − 0.2 mA − 0.7 mA − 0.6 mA − 0.5 mA −20 − 0.4 mA − 0.1 mA −10 0 −2 −4 −6 −8 −10 0 Collector-emitter voltage V CE  MHz = 25° ...

Page 11

... V ) Collector current I  −10 4 −10 3 −10 2 −10 −1 − 0.4 − 0.6 − 0.8 −1.0 −100 (V) Input voltage V SJH00001BED UNR111x Series V IN −100 = − 25° −10 −1 − 0.1 − 0.01 −3.5 −4.0 − 0.1 − Output current ...

Page 12

... UNR111x Series Characteristics charts of UNR111H  −120 = 25° −100 −80 = − 0 − 0.4 mA −60 − 0.3 mA −40 − 0.2 mA −20 − 0 −2 −4 −6 −8 −10 0 Collector-emitter voltage V CE  MHz = 25° ...

Page 13

... MHz = 25° −1 −10 Collector-base voltage V CB www.DataSheet4U.com  −100 −10 −1 − 0.1 − 0.01 − 0.1 −1 −10 −100 Output current I (V) O SJH00001BED UNR111x Series = − 0 25° −100 ( ...

Page 14

Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...

Related keywords