UNR32A0 Panasonic Semiconductor, UNR32A0 Datasheet
UNR32A0
Manufacturer Part Number
UNR32A0
Description
Silicon NPN epitaxial planar type
Manufacturer
Panasonic Semiconductor
Datasheet
1.UNR32A0.pdf
(3 pages)
Available stocks
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
UNR32A000L
Manufacturer:
PANASONIC
Quantity:
42 000
Company:
Part Number:
UNR32A000L
Manufacturer:
TI
Quantity:
146
Transistors with built-in Resistor
UNR32A0
Silicon NPN epitaxial planar type
For digital circuits
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: October 2003
• Suitable for high-density mounting and downsizing of the equipment
• Contribute to low power consumption
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
Transition frequency
Parameter
Parameter
a
Symbol
= 25°C ± 3°C
V
V
Symbol
T
V
P
I
T
V
CBO
CEO
V
a
I
I
I
V
V
C
stg
CE(sat)
T
h
CBO
CEO
EBO
R
j
f
CBO
CEO
= 25°C
FE
OH
OL
T
1
−55 to +125
Rating
I
I
V
V
V
V
I
V
V
V
C
C
C
100
125
CB
CE
EB
CE
CC
CC
CB
50
50
80
= 10 µA, I
= 2 mA, I
= 10 mA, I
SJH00054BED
= 50 V, I
= 6 V, I
= 10 V, I
= 50 V, I
= 5 V, V
= 5 V, V
= 10 V, I
B
C
E
Conditions
B
B
Unit
mW
C
B
E
B
E
mA
= 0
= 0
°C
°C
V
V
= 0
= 0.5 V, R
= 2.5 V, R
= 0
= 0
= 5 mA
= 0.3 mA
= −2 mA, f = 200 MHz
L
L
= 1 kΩ
= 1 kΩ
Marking Symbol: KT
Internal Connection
0.23
+0.05
–0.02
0.33
5°
+0.05
–0.02
(0.40)
B
−30%
3
0.80
1.20
1
Min
160
4.9
50
50
R
(0.40)
±0.05
±0.05
1
2
(47 kΩ)
Typ
150
47
SSSMini3-F1 Package
+30%
Max
0.01
0.25
460
0.1
0.5
0.2
0.10
E
C
1: Base
2: Emitter
3: Collector
+0.05
–0.02
Unit: mm
MHz
Unit
mA
µA
µA
kΩ
V
V
V
V
V
1
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UNR32A0 Summary of contents
Page 1
... Transistors with built-in Resistor UNR32A0 Silicon NPN epitaxial planar type For digital circuits ■ Features • Suitable for high-density mounting and downsizing of the equipment • Contribute to low power consumption ■ Absolute Maximum Ratings T Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) ...
Page 2
... UNR32A0 120 100 120 ( °C ) Ambient temperature T a 400 = 85°C a 300 25°C −25°C 200 100 100 ( mA ) Collector current I C 100 = 0 25°C ...
Page 3
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...