UNR32AE Panasonic Semiconductor, UNR32AE Datasheet
UNR32AE
Manufacturer Part Number
UNR32AE
Description
Silicon NPN epitaxial planar type
Manufacturer
Panasonic Semiconductor
Datasheet
1.UNR32AE.pdf
(3 pages)
Transistors with built-in Resistor
UNR32AE
Silicon NPN epitaxial planar type
For digital circuits
Features
Features
Absolute Maximum Ratings
Absolute Maximum Ratings
Electrical Characteristics
Electrical Characteristics
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: November 2004
Suitable for high-density mounting and downsizing of the equipment
Suitable for high-density mounting and downsizing of the equipment
Contribute to low power consumption
Contribute to low power consumption
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
Resistance ratio
Transition frequency
Parameter
Parameter
T
a
a
a
= 25
= 25
T
a
a
a
= 25
= 25
°C±3°C
Symbol
V
V
T
T
T
°C
P
I
T
T
T
CBO
CEO
Symbol
stg
stg
C
V
R
T
j
j
V
V
I
I
I
V
V
h
h
h
CE(sat)
1
CBO
CEO
EBO
R
CBO
CEO
f
f
f
FE
FE
OH
OL
/ R
/ R
/ R
T
T
1
2
2
–55 to +125
Rating
I
I
V
V
V
V
I
V
V
V
C
C
C
C
C
C
C
C
C
100
125
CB
CE
CE
CE
EB
CE
CE
CE
CC
CC
CC
CC
CC
CC
CB
50
50
80
= 10
= 10
= 2 mA, I
= 2 mA, I
= 10 mA, I
= 10 mA, I
= 50 V, I
= 50 V, I
= 50 V, I
= 6 V, I
= 10 V, I
= 10 V, I
= 5 V, V
= 5 V, V
= 5 V, V
= 5 V, V = 0.5 V, R
= 5 V, V
= 5 V, V
= 5 V, V
= 5 V, V = 6 V, R
= 10 V, I
SJH00106AED
µA, I
C
C
C
B
E
E
E
B
B
B
B
E
E
E
B
C
C
C
E
E
E
B
= 0
= 0
= 0
Unit
mW
Conditions
= 0
= 0
mA
= 0.5 V, R
= 0.5 V, R = 1 k
= 6 V, R
= 6 V, R = 1 k
= 0
= 0
= 0
= 5 mA
= 5 mA
= —2 mA, f = 200 MHz
= —2 mA, f = 200 MHz
°C
°C
= 0.3 mA
V
V
L
L
L
L
= 1 k
= 1 kΩ
= 1 k
L
L
L
L
= 1 k
= 1 kΩ
= 1 k
Ω
Marking Symbol: KC
Internal Connection
Ω
1: Base
2: Emitter
3: Collector
0.23
+0.05
–0.02
0.33
5°
+0.05
–0.02
(0.40)
—30%
3
0.80
1.20
1
Min
4.9
1.7
50
50
60
B
(0.40)
±0.05
±0.05
R
R
(22 kΩ)
2
1
2
(47 kΩ)
Typ
150
2.1
47
SSSMini3-F1 Package
+30%
Max
0.10
0.25
0.1
0.5
0.2
0.2
2.6
+0.05
–0.02
C
E
Unit: mm
MHz
Unit
mA
µA
µA
kΩ
kΩ
k
V
V
V
V
V
1
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UNR32AE Summary of contents
Page 1
... Transistors with built-in Resistor UNR32AE Silicon NPN epitaxial planar type For digital circuits Features Features Suitable for high-density mounting and downsizing of the equipment Suitable for high-density mounting and downsizing of the equipment Contribute to low power consumption ...
Page 2
... Output current UNR32AE_I - V V 0. 25° 500 µA B 0.08 0. Collector-emitter voltage V CE UNR32AE_C - V MHz Collector-base voltage SJH00106AED UNR32AE_V CE(sat ...
Page 3
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...