LMN200B01 Diodes Incorporated, LMN200B01 Datasheet

LMN200B01

Manufacturer Part Number

LMN200B01

Description

200 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND N-MOSFET

Manufacturer

Diodes Incorporated

Datasheet

1.LMN200B01.pdf (10 pages)

Current page: 1 of 10
Download datasheet (593Kb)

DS30651 Rev. 7 - 2

Mechanical Data

Thermal Characteristics

Features

Notes:

General Description

Maximum Ratings, Total Device

Power Dissipation (Note 3)

Power Derating Factor above 125 C

Output Current

Sub-Components

DDTB142JU_DIE

DSNM6047_DIE

Junction Operation and Storage Temperature Range

Thermal Resistance, Junction to Ambient Air (Note3)

(Equivalent to one heated junction of PNP transistor)

200 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND N-MOSFET

Case: SOT-26

Case Material: Molded Plastic, “Green” Molding

Compound. UL Flammability Classification Rating 94V-0

Moisture sensitivity: Level 1 per J-STD-020C

Terminal Connections: See Diagram

Terminals: Finish - Matte Tin annealed over Copper

leadframe. Solderable per MIL-STD-202, Method 208

Marking & Type Code Information: See Last Page

Ordering Information: See Last Page

Weight: 0.016 grams (approximate)

LMN200B01 is best suited for applications where the load

needs to be turned on and off using control circuits like

micro-controllers, comparators, etc., particularly at a point

of load. It features a discrete pass transistor with stable

can support continuous maximum current of 200 mA. It

also contains a discrete N-MOSFET that can be used as

control. This N-MOSFET also has a built-in pull down

resistor at its gate. The component can be used as a part

of a circuit or as a stand alone discrete device.

Voltage Controlled Small Signal Switch

N-MOSFET with Gate Pull-Down Resistor

Surface Mount Package

Ideally Suited for Automated Assembly Processes

Lead Free By Design/ROHS Compliant (Note 1)

"Green" Device (Note 2)

CE(SAT)

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout

1. No purposefully added lead.

document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

which does not depend on the input voltage and

Reference

Characteristic

PNP Transistor

Device Type

N-MOSFET

@ T

Lead-free Green

= 25 C unless otherwise specified

www.diodes.com

1 of 10

Symbol

out

der

Symbol

Fig. 2 Schematic and Pin Configuration

R1 (NOM)

stg

10K

PNP

E_Q1

C_Q1

Fig. 1: SOT-26

DDTB142JU_DIE

WITH PULL DOWN RESISTOR

10K

470

G_Q2

B_Q1

Value

-55 to +150

300

200

2.4

R2 (NOM)

LMN200B01

Value

417

DSNM6047_DIE

470

37K

S_Q2

D_Q2

NMOS

R3 (NOM)

37K

Diodes Incorporated

mW/ C

Unit

LMN200B01

°C/W

Unit

°C

Figure

Related parts for LMN200B01

LMN200B01 Summary of contents

Page 1

... LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND N-MOSFET General Description LMN200B01 is best suited for applications where the load needs to be turned on and off using control circuits like micro-controllers, comparators, etc., particularly at a point of load. It features a discrete pass transistor with stable ...

Page 2

... Value V -50 CBO V -50 CEO V - -200 unless otherwise specified A Symbol V DSS V DGR V GSS = 10V www.diodes.com = 25 C unless otherwise specified A Unit Value Unit +/-20 V +/-40 115 mA 800 115 mA LMN200B01 ...

Page 3

... -5V -200 -0.3V -5V, = -2.5V -50mA /-2.5mA -5V - -5V -200mA -1 -50mA -5mA -3 -80mA -8mA -5 -10V -5mA MHz f = 100MHz V = -10V 0A 1MHz LMN200B01 ...

Page 4

... DS(ON 5V 50mA 10V 500mA 115 mA DS DS(ON 200 mA DS DS(ON -25V 0V 1MHz 30V, V =10V 200mA 150 0V 115 mA 175 LMN200B01 ...

Page 5

... 25° 85° COLLECTOR CURRENT (A) C Fig vs. I CE(SAT -55° 25° 150° 125° 85° 100 1000 I , COLLECTOR CURRENT (mA) C Fig vs. I BE(ON) C 150°C 1000 LMN200B01 ...

Page 6

... 150° 85° 25° -55°C A 0.01 0.1 I DRAIN CURRENT ( Fig. 12 Static Drain-Source On-Resistance vs. Drain Current T = 25°C A Pulsed I = 115mA GATE SOURCE VOLTAGE (V) GS, Fig. 14 Static Drain-Source On-Resistance vs. Gate-Source Voltage LMN200B01 ...

Page 7

... T = 85° Pulsed 0 SOURCE-DRAIN VOLTAGE (V) SD Fig. 16 Reverse Drain Current vs. Source-Drain Voltage T = -55° 25° 85° 125° 150°C A 0.2 0.4 0.6 0 DRAIN CURRENT (A) D Fig. 18 Forward Transconductance vs. Drain Current (V > DS(ON) LMN200B01 Diodes Incorporated ...

Page 8

... Application Details PNP Transistor (DDTB142JU) and N-MOSFET (DSNM6047) with gate pull-down resistor integrated as one in LMN200B01 can be used as a discrete entity for general purpose applications integrated circuit to function as a Load Switch. When it is used as the latter as shown in Fig 19, various input voltage sources can be used as long as it does not exceed the maximum ratings of the device ...

Page 9

... PM1 = Product Type Marking Code Date Code Marking Y = Year ex 2006 M = Month ex September 2006 T March Apr May Jun Jul www.diodes.com Shipping 3000/Tape & Reel 2007 2008 2009 Aug Sep Oct Nov Dec LMN200B01 ...

Page 10

... Diodes Incorporated. DS30651 Rev Dim Min A 0.35 B 1 0.013 0.35 M 0.1 0 All Dimensions in mm Figure 23 Dimensions IMPORTANT NOTICE LIFE SUPPORT www.diodes.com SOT-26 Max Typ 0.5 0.38 1.7 1 0.55 3.1 3 0.1 0.05 1.3 1.1 0.55 0.4 0.2 0.15 8° - SOT-26* 3.2 1.6 0.55 0.8 2.4 0.95 LMN200B01 ...

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