LMN400E01 Diodes Incorporated, LMN400E01 Datasheet

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LMN400E01

Manufacturer Part Number
LMN400E01
Description
400 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND ESD PROTECTED N-MOSFET
Manufacturer
Diodes Incorporated
Datasheet
Notes:
General Description
Features
Mechanical Data
Maximum Ratings, Total Device
DS30750 Rev. 4 - 2
Thermal Characteristics
Power Dissipation (Note 3)
Power Derating Factor above 37.5 C
Output Current
Junction Operation and Storage Temperature Range
Thermal Resistance, Junction to Ambient Air (Note 3)
(Equivalent to one heated junction of PNP transistor)
LMN400E01 is best suited for applications where the load
needs to be turned on and off using control circuits like
micro-controllers, comparators etc. particularly at a point of
load. It features a discrete pass transistor with stable
V
support continuous maximum current of 400 mA. It also
contains an ESD protected discrete N-MOSFET that can be
used as control. The component can be used as a part of a
circuit or as a stand alone discrete device.
Voltage Controlled Small Signal Switch
N-MOSFET with ESD Gate Protection
Surface Mount Package
Ideally Suited for Automated Assembly Processes
Lead Free By Design/ROHS Compliant (Note 1)
"Green" Device (Note 2)
Case: SOT-363
Case Material: Molded Plastic. "Green Molding" Compound.
UL Flammability Classification Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL- STD -202, Method 208
Marking & Type Code Information: See Last Page
Ordering Information: See Last Page
Weight: 0.016 grams (approximate)
CE(SAT)
DMN601TK_DIE (ESD Protected)
2 . Diodes Inc.'s "Green" policy can be found on our website at http:/www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
1. No purposefully added lead.
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
which does not depend on input voltage and can
Sub-Component P/N
DDTB122LU_DIE
Characteristic
Characteristic
@ T
Reference
400 mA LOAD SWITCH FEATURING PRE-BIASED PNP
A
Q1
Q2
= 25 C unless otherwise specified
www.diodes.com
TRANSISTOR AND ESD PROTECTED N-MOSFET
1 of 10
PNP Transistor
Device Type
Symbol
N-MOSFET
Symbol
T
P
R
j
I
P
, T
out
der
d
JA
stg
PNP
Q1
E_Q1
Fig 2 : Schematic and Pin Configuration
C_Q1
1
6
C
E
DDTB122LU
R1 10K
1
B
2
Fig. 1: SOT-363
R1(NOM)
-55 to +150
220
3
10K
R2
Value
Value
200
400
B_Q1
625
1.6
G_Q2
5
2
6
LMN400E01
DMN601TK
5
4
G
R2(NOM)
S_Q2
D_Q2
220
4
3
S
D
Q2
NMOS
Diodes Incorporated
mW/°C
Unit
mW
Unit
mA
C/W
LMN400E01
C
Figure
2
2

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LMN400E01 Summary of contents

Page 1

... General Description LMN400E01 is best suited for applications where the load needs to be turned on and off using control circuits like micro-controllers, comparators etc. particularly at a point of load. It features a discrete pass transistor with stable V which does not depend on input voltage and can CE(SAT) support continuous maximum current of 400 mA ...

Page 2

... Continuous Source Current DS30750 Rev Symbol Value V CBO V CEO -400 unless otherwise specified A Symbol V DSS V DGR V GSS = 10V www.diodes.com Unit -50 V - Value Unit +/-20 V +/-40 300 mA 800 300 mA LMN400E01 ...

Page 3

... I = -400 -0.3V -5V -2.5V -0 -50mA /-2.5mA - -5V -400mA -50mA -5mA -2 -5 -400mA -20mA C B 0.286 MHz V = -10V -5mA 100MHz V = -10V 0A 1MHz LMN400E01 ...

Page 4

... I = 50mA 10V 500mA 10V 2*V DS DS(ON 5V 50mA 10V 500mA DS(ON 200 -25V 0V 1MHz 30V, V =10V 200mA Ohm 150 Ohm 300 mA LMN400E01 ...

Page 5

... 85° COLLECTOR CURRENT (A) C Fig vs CE(SAT -55° 125° 25° 150° 85°C A 1000 10000 100 , I COLLECTOR CURRENT (mA) C Fig vs BE(ON LMN400E01 ...

Page 6

... T = 85° GATE-SOURCE VOLTAGE (V) GS Fig. 11 Transfer Characteristics V = 10V GS Pulsed T = 125° 85° 150° -55° 25° 0° -25° 0.1 0.01 I DRAIN CURRENT ( Fig. 13 Static Drain-Source On-Resistance vs. Drain Current LMN400E01 1 ...

Page 7

... T = -25° -55°C A 0 SOURCE-DRAIN VOLTAGE (V) SD Fig. 17 Reverse Drain Current vs. Source-Drain Voltage T = -25° -55° 25° 125° 85° 150°C A 0.2 0.6 0.8 0 DRAIN CURRENT (A) D Fig. 19 Forward Transconductance vs. Drain Current (V > DS(ON) LMN400E01 ...

Page 8

... Application Details PNP Transistor (DDTB122LU) and ESD Protected N-MOSFET (DMN601TK) integrated as one in LMN400E01 can be used as a discrete entity for general application integrated circuit to function as a Load Switch. When it is used as the latter as shown in Fig. 20, various input voltage sources can be used as long as it does not exceed the maximum ratings of the device ...

Page 9

... PM5 PM5 = Product Type Marking Code Date Code Marking Y = Year, e.g 2006 M = Month, e.g September 2007 U March Apr May Jun Jul www.diodes.com Packaging Shipping SOT-363 3000/Tape & Reel 2008 2009 V W Aug Sep Oct Nov Dec LMN400E01 ...

Page 10

... Diodes Incorporated. DS30750 Rev SOT-363 Dim All Dimensions Figure 14 Dimensions Typical dimensions in mm IMPORTANT NOTICE LIFE SUPPORT www.diodes.com Min Max 0.10 0.30 1.15 1.35 2.00 2.20 0.65 Nominal 0.30 0.40 1.80 2.20 0.10 0.90 1.00 0.25 0.40 0.10 0.25 0 8° SOT-363* 2.5 1.3 0.42 0.6 1.9 0.65 LMN400E01 ...

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